Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

• Published in: Nature communications Vol. 12; no. 1; pp. 7232 - 10
• Main Authors: Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 13.12.2021; Nature Publishing Group; Nature Portfolio
• Subjects: 147/143; 639/925/357; 639/925/927/1007; Core-shell structure; Electrodes; Evolution; Filaments; Hafnium oxide; High resolution electron microscopy; Humanities and Social Sciences; Memristors; multidisciplinary; Oxidation; Oxygen; Phase transitions; Rupture; Rupturing; Science; Science (multidisciplinary); Switching; Transmission electron microscopy

The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO 2 has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the c...