Exploring atomic defects in molybdenum disulphide monolayers
Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investiga...
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| Published in | Nature communications Vol. 6; no. 1; p. 6293 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
19.02.2015
Nature Publishing Group Nature Pub. Group |
| Subjects | |
| Online Access | Get full text |
| ISSN | 2041-1723 2041-1723 |
| DOI | 10.1038/ncomms7293 |
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| Abstract | Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by
ab-initio
calculation. Defect density up to 3.5 × 10
13
cm
−2
is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
Imperfections can greatly alter a material’s properties. Here, the authors investigate the influence of point defects on the electronic structure, charge-carrier mobility and optical absorption of molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. |
|---|---|
| AbstractList | Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by
ab-initio
calculation. Defect density up to 3.5 × 10
13
cm
−2
is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
Imperfections can greatly alter a material’s properties. Here, the authors investigate the influence of point defects on the electronic structure, charge-carrier mobility and optical absorption of molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10(13) cm(-2) is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10(13) cm(-2) is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm −2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm-2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10(13) cm(-2) is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. |
| ArticleNumber | 6293 |
| Author | Wu, Dianzhong Zhang, Xixiang Mao, Nannan Yuan, Jun Hu, Zhixin Zhang, Zhiyong Hong, Jinhua Lv, Danhui Li, Kun Zhang, Ze Gu, Lin Zhang, Jin Probert, Matt Jin, Chuanhong Yang, Xinan Xie, Liming Feng, Qingliang Ji, Wei |
| Author_xml | – sequence: 1 givenname: Jinhua surname: Hong fullname: Hong, Jinhua organization: State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University – sequence: 2 givenname: Zhixin surname: Hu fullname: Hu, Zhixin organization: Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China – sequence: 3 givenname: Matt surname: Probert fullname: Probert, Matt organization: Department of Physics, University of York, Heslington, York YO10 5DD, UK – sequence: 4 givenname: Kun surname: Li fullname: Li, Kun organization: Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST) – sequence: 5 givenname: Danhui surname: Lv fullname: Lv, Danhui organization: State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University – sequence: 6 givenname: Xinan surname: Yang fullname: Yang, Xinan organization: Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter – sequence: 7 givenname: Lin surname: Gu fullname: Gu, Lin organization: Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter – sequence: 8 givenname: Nannan surname: Mao fullname: Mao, Nannan organization: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University – sequence: 9 givenname: Qingliang surname: Feng fullname: Feng, Qingliang organization: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology – sequence: 10 givenname: Liming surname: Xie fullname: Xie, Liming organization: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology – sequence: 11 givenname: Jin surname: Zhang fullname: Zhang, Jin organization: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University – sequence: 12 givenname: Dianzhong surname: Wu fullname: Wu, Dianzhong organization: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University – sequence: 13 givenname: Zhiyong surname: Zhang fullname: Zhang, Zhiyong organization: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University – sequence: 14 givenname: Chuanhong surname: Jin fullname: Jin, Chuanhong email: chhjin@zju.edu.cn organization: State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University – sequence: 15 givenname: Wei surname: Ji fullname: Ji, Wei email: wji@ruc.edu.cn organization: Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Department of Physics and Astronomy, Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong University – sequence: 16 givenname: Xixiang surname: Zhang fullname: Zhang, Xixiang organization: Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST) – sequence: 17 givenname: Jun surname: Yuan fullname: Yuan, Jun email: jun.yuan@york.ac.uk organization: State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University, Department of Physics, University of York, Heslington, York YO10 5DD, UK – sequence: 18 givenname: Ze surname: Zhang fullname: Zhang, Ze organization: State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/25695374$$D View this record in MEDLINE/PubMed |
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| Snippet | Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide... |
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| SubjectTerms | 119/118 639/301/1005/1007 639/301/119/1000/1018 639/638/563/979 639/766/36 Humanities and Social Sciences Molybdenum multidisciplinary Optical properties Science Science (multidisciplinary) |
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| Title | Exploring atomic defects in molybdenum disulphide monolayers |
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