Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection

• Published in: Sensors (Basel, Switzerland) Vol. 19; no. 7; p. 1484
• Main Authors: Kuo, Wen-Che, Sarangadharan, Indu, Pulikkathodi, Anil Kumar, Chen, Po-Hsuan, Wang, Shin-Li, Wu, Chang-Run, Wang, Yu-Lin
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI 27.03.2019; MDPI AG
• Subjects: electric double layer (EDL); field-effect transistors (FETs); miRNA; sensors; stability; electric double layer (EDL); miRNA; sensors; stability; field-effect transistors (FETs)

In this research, we developed a miRNA sensor using an electrical double layer (EDL) gated field-effect transistor (FET)-based biosensor with enhanced sensitivity and stability. We conducted an in-depth investigation of the mechanisms that give rise to fluctuations in the electrical signal, affectin...