Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

We report systematic optical studies of WS 2 and WSe 2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (...

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Published inScientific reports Vol. 3; no. 1; p. 1608
Main Authors Zeng, Hualing, Liu, Gui-Bin, Dai, Junfeng, Yan, Yajun, Zhu, Bairen, He, Ruicong, Xie, Lu, Xu, Shijie, Chen, Xianhui, Yao, Wang, Cui, Xiaodong
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LanguageEnglish
Published London Nature Publishing Group UK 11.04.2013
Nature Publishing Group
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Abstract We report systematic optical studies of WS 2 and WSe 2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.
AbstractList We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.
We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.
We report systematic optical studies of WS 2 and WSe 2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.
ArticleNumber 1608
Author Zeng, Hualing
Cui, Xiaodong
Xie, Lu
Yan, Yajun
Dai, Junfeng
Zhu, Bairen
He, Ruicong
Liu, Gui-Bin
Xu, Shijie
Chen, Xianhui
Yao, Wang
Author_xml – sequence: 1
  givenname: Hualing
  surname: Zeng
  fullname: Zeng, Hualing
  organization: Department of Physics, The University of Hong Kong
– sequence: 2
  givenname: Gui-Bin
  surname: Liu
  fullname: Liu, Gui-Bin
  organization: Department of Physics, The University of Hong Kong, Center for Theoretical and Computational Physics, The University of Hong Kong, School of Physics, Beijing Institute of Technology
– sequence: 3
  givenname: Junfeng
  surname: Dai
  fullname: Dai, Junfeng
  organization: Department of Physics, The University of Hong Kong, Department of Physics, South University of Science and Technology of China
– sequence: 4
  givenname: Yajun
  surname: Yan
  fullname: Yan, Yajun
  organization: Hefei National Laboratory for physical Science at Microscale and Department of Physics, University of Science and Technology of China
– sequence: 5
  givenname: Bairen
  surname: Zhu
  fullname: Zhu, Bairen
  organization: Department of Physics, The University of Hong Kong
– sequence: 6
  givenname: Ruicong
  surname: He
  fullname: He, Ruicong
  organization: Department of Physics, The University of Hong Kong
– sequence: 7
  givenname: Lu
  surname: Xie
  fullname: Xie, Lu
  organization: Department of Physics, The University of Hong Kong
– sequence: 8
  givenname: Shijie
  surname: Xu
  fullname: Xu, Shijie
  organization: Department of Physics, The University of Hong Kong
– sequence: 9
  givenname: Xianhui
  surname: Chen
  fullname: Chen, Xianhui
  organization: Hefei National Laboratory for physical Science at Microscale and Department of Physics, University of Science and Technology of China
– sequence: 10
  givenname: Wang
  surname: Yao
  fullname: Yao, Wang
  organization: Department of Physics, The University of Hong Kong, Center for Theoretical and Computational Physics, The University of Hong Kong
– sequence: 11
  givenname: Xiaodong
  surname: Cui
  fullname: Cui, Xiaodong
  organization: Department of Physics, The University of Hong Kong
BackLink https://www.ncbi.nlm.nih.gov/pubmed/23575911$$D View this record in MEDLINE/PubMed
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Snippet We report systematic optical studies of WS 2 and WSe 2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd...
We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd...
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proquest
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springer
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StartPage 1608
SubjectTerms 639/301/119
639/301/119/1000
639/766/119/1001
639/766/119/995
Chalcogens - chemistry
Computer Simulation
Efficiency
Graphene
Humanities and Social Sciences
Light
Luminescence
Luminescent Measurements - methods
Materials Testing
Models, Chemical
multidisciplinary
Optical properties
Photons
Physics
Scattering, Radiation
Science
Semiconductors
Spin Labels
Splitting
Symmetry
Tungsten
Tungsten Compounds - chemistry
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Title Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
URI https://link.springer.com/article/10.1038/srep01608
https://www.ncbi.nlm.nih.gov/pubmed/23575911
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Volume 3
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