On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

• Published in: Materials Vol. 14; no. 6; p. 1432
• Main Authors: Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 15.03.2021; MDPI
• Subjects: Energy; Film thickness; Fluxes; Gas mixtures; Gases; Mixing ratio; Oxidation; Parameters; Perfluorocarbons; Plasma chemistry; Plasma diagnostics; Plasma etching; Plasmas (physics); Polymer films; Polymerization; Polymers; Reaction kinetics; Reactive ion etching; Review; Silicon dioxide; Silicon nitride; Thin films; Transistors; polymerization; effective reaction probability; etching kinetics; ion-assisted chemical reaction; fluorocarbon gas plasma; etching yield; active species; etching mechanism; plasma parameters

This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the...