Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

• Published in: Nanomaterials (Basel, Switzerland) Vol. 13; no. 19; p. 2704
• Main Authors: Byun, Jisu, Kho, Wonwoo, Hwang, Hyunjoo, Kang, Yoomi, Kang, Minjeong, Noh, Taewan, Kim, Hoseong, Lee, Jimin, Kim, Hyo-Bae, Ahn, Ji-Hoon, Ahn, Seung-Eon
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.10.2023; MDPI
• Subjects: Analysis; Artificial intelligence; Brain; Concurrent processing; Data processing; Energy efficiency; Ferroelectric devices; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Firing pattern; FTJ; Hafnium; Information processing; Magnetic tunnel junctions; Mathematical optimization; Methods; Neural networks; Neuromorphic computing; Optimization; Pattern recognition; Properties; SNN; STDP; Synapses; synaptic devices; Synaptic plasticity; Tunnel junctions; Unstructured data; South Korea
• DOI: 10.3390/nano13192704
• ISSN: 2079-4991

The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing of unstructured data, encompassing text, speech, and video. Traditional serial computing systems based on the von Neumann architecture, employed in information and communication technology development for decades, are not suitable for the concurrent processing of massive unstructured data tasks with relatively low-level operations. As a result, there arises a pressing need to develop novel parallel computing systems. Recently, there has been a burgeoning interest among developers in emulating the intricate operations of the human brain, which efficiently processes vast datasets with remarkable energy efficiency. This has led to the proposal of neuromorphic computing systems. Of these, Spiking Neural Networks (SNNs), designed to closely resemble the information processing mechanisms of biological neural networks, are subjects of intense research activity. Nevertheless, a comprehensive investigation into the relationship between spike shapes and Spike-Timing-Dependent Plasticity (STDP) to ensure efficient synaptic behavior remains insufficiently explored. In this study, we systematically explore various input spike types to optimize the resistive memory characteristics of Hafnium-based Ferroelectric Tunnel Junction (FTJ) devices. Among the various spike shapes investigated, the square-triangle (RT) spike exhibited good linearity and symmetry, and a wide range of weight values could be realized depending on the offset of the RT spike. These results indicate that the spike shape serves as a crucial indicator in the alteration of synaptic connections, representing the strength of the signals.