Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low...

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Published inScientific reports Vol. 15; no. 1; pp. 24026 - 24
Main Authors T, Ranjith Kumar, G, Lakshmi Priya
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 05.07.2025
Nature Publishing Group
Nature Portfolio
Subjects
639/166/987
639/301/1005/1007
639/925/927
Accuracy
Biosensing Techniques - instrumentation
Biosensing Techniques - methods
Biosensor
Biosensors
Dengue - diagnosis
Dengue - virology
Dengue fever
Dengue Virus
Dielectric cavities
Efficiency
Electrostatics
Engineering
Enzymes
Gain bandwidth product
Humanities and Social Sciences
Humans
Infectious diseases
multidisciplinary
NS1 protein
NS1 protein sensing
Plasma
Proteins
Science
Science (multidisciplinary)
Sensitivity
Simulation
Spike protein
Transistors, Electronic
Uniform TFET
Vector-borne diseases
Viral Nonstructural Proteins - analysis
Dielectric cavities
Gain bandwidth product
Sensitivity
Uniform TFET
NS1 protein sensing
Biosensor
Online AccessGet full text

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Abstract This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10 –17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON–OFF ratio of 2.83 × 10 12 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g m ) of 577 µS, cut-off frequency (f T ) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V -1 , and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
AbstractList This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10–17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON–OFF ratio of 2.83 × 1012 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (gm) of 577 µS, cut-off frequency (fT) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V-1, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10 –17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON–OFF ratio of 2.83 × 10 12 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g m ) of 577 µS, cut-off frequency (f T ) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V -1 , and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10 –17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON–OFF ratio of 2.83 × 10 12 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g m ) of 577 µS, cut-off frequency (f T ) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V -1 , and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 10 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g ) of 577 µS, cut-off frequency (f ) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V , and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10-17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 1012 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (gm) of 577 µS, cut-off frequency (fT) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V-1, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10-17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 1012 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (gm) of 577 µS, cut-off frequency (fT) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V-1, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
Abstract This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10–17 A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON–OFF ratio of 2.83 × 1012 representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (gm) of 577 µS, cut-off frequency (fT) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V-1, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
ArticleNumber 24026
Author T, Ranjith Kumar
G, Lakshmi Priya
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  organization: Centre for Advanced Materials and Innovative Technologies, Vellore Institute of Technology, School of Electronics Engineering, Vellore Institute of Technology
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ISSN 2045-2322
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Issue 1
Keywords Dielectric cavities
Gain bandwidth product
Sensitivity
Uniform TFET
NS1 protein sensing
Biosensor
Language English
License 2025. The Author(s).
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Snippet This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel...
Abstract This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel...
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SubjectTerms 639/166/987
639/301/1005/1007
639/925/927
Accuracy
Biosensing Techniques - instrumentation
Biosensing Techniques - methods
Biosensor
Biosensors
Dengue - diagnosis
Dengue - virology
Dengue fever
Dengue Virus
Dielectric cavities
Efficiency
Electrostatics
Engineering
Enzymes
Gain bandwidth product
Humanities and Social Sciences
Humans
Infectious diseases
multidisciplinary
NS1 protein
NS1 protein sensing
Plasma
Proteins
Science
Science (multidisciplinary)
Sensitivity
Simulation
Spike protein
Transistors, Electronic
Uniform TFET
Vector-borne diseases
Viral Nonstructural Proteins - analysis
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Title Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein
URI https://link.springer.com/article/10.1038/s41598-025-08892-5
https://www.ncbi.nlm.nih.gov/pubmed/40617880
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https://doaj.org/article/574669d58e03430296bb2b26bc5e5c09
Volume 15
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