Contactless processing of SiGe-melts in EML under reduced gravity
The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si Ge under microg...
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Published in | NPJ microgravity Vol. 2; no. 1; pp. 1 - 9 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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16.12.2016
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Abstract | The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si
Ge
under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures. |
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AbstractList | The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si
1−
x
Ge
x
under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures.
Low-gravity environments help to produce a semiconducting alloy with great promise for electronics, shows researchers from Germany. Yuansu Luo from the Georg-August-Universität and co-workers measure the thermal properties of molten silicon–germanium during parabolic flights. Silicon is the dominant material in the electronic industry. Adding germanium, however, creates a semiconductor with even more useful properties. Producing high-quality crystals of this alloy is challenging because gravity separates the two elements when in liquid form. A low-gravity environment could help, but more must be known about the properties of silicon–germanium under such conditions. Luo et al
.
processed a silicon–germanium melt in an electromagnetic levitation facility in microgravity conditions, analyzed video images to determine its thermal expansion, viscosity, and surface tension and observed an alloying effect and a crossover phenomenon. The results pave the way for more detailed investigations on the International Space Station. The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si Ge under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures. The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si1−xGex under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures. Electronic materials: Achieving a better mix Low-gravity environments help to produce a semiconducting alloy with great promise for electronics, shows researchers from Germany. Yuansu Luo from the Georg-August-Universität and co-workers measure the thermal properties of molten silicon–germanium during parabolic flights. Silicon is the dominant material in the electronic industry. Adding germanium, however, creates a semiconductor with even more useful properties. Producing high-quality crystals of this alloy is challenging because gravity separates the two elements when in liquid form. A low-gravity environment could help, but more must be known about the properties of silicon–germanium under such conditions. Luo et al. processed a silicon–germanium melt in an electromagnetic levitation facility in microgravity conditions, analyzed video images to determine its thermal expansion, viscosity, and surface tension and observed an alloying effect and a crossover phenomenon. The results pave the way for more detailed investigations on the International Space Station. Abstract The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si 1− x Ge x under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures. |
ArticleNumber | 1 |
Author | Schneider, Stephan Abrosimov, Nikolay Czupalla, Matthias Lohöfer, Georg Damaschke, Bernd Samwer, Konrad Luo, Yuansu |
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Snippet | The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here,... Abstract The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical... Electronic materials: Achieving a better mix Low-gravity environments help to produce a semiconducting alloy with great promise for electronics, shows... |
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Title | Contactless processing of SiGe-melts in EML under reduced gravity |
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