Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth

• Published in: Journal of physics. D, Applied physics Vol. 47; no. 39; pp. 394001 - 13
• Main Authors: Tomioka, Katsuhiro, Fukui, Takashi
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.10.2014
• Subjects: Construction; Dislocations; Electronics; epitaxy; FET; Field effect transistors; III-V nanowires; Nanowires; Semiconductor devices; Silicon; Silicon substrates; tunnel FET

We report on the recent progress in electronic applications using III-V nanowires (NWs) on Si substrates using the selective-area growth method. This method could align vertical III-V NWs on Si under specific growth conditions. Detailed studies of the III-V NW/Si heterointerface showed the possibili...