Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material

Reduction of thermal conductivity κ while preserving high electrical conductivity σ in materials continues to be a vital goal in thermoelectric study for the reuse of exhaust heat energy. In the use of an eco-friendly and ubiquitous element, Si as thermoelectric material, high κ value in bulk Si is...

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Bibliographic Details
Published inNano energy Vol. 12; pp. 845 - 851
Main Authors Nakamura, Yoshiaki, Isogawa, Masayuki, Ueda, Tomohiro, Yamasaka, Shuto, Matsui, Hideki, Kikkawa, Jun, Ikeuchi, Satoaki, Oyake, Takafumi, Hori, Takuma, Shiomi, Junichiro, Sakai, Akira
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2015
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Summary:Reduction of thermal conductivity κ while preserving high electrical conductivity σ in materials continues to be a vital goal in thermoelectric study for the reuse of exhaust heat energy. In the use of an eco-friendly and ubiquitous element, Si as thermoelectric material, high κ value in bulk Si is the essential bottleneck to achieve high dimensionless figure of merit. This is a motivation for many recent studies on reducing κ in Si, by nanostructuring, e.g., using grains/wires with size smaller than the phonon mean free path. However, κ reduction that can be achieved tends to be saturated presumably due to an amorphous limit. Here, we present a nanoarchitecture for defeating the κ amorphous limit while preserving bulk-like σ. This new nanoarchitecture is an assembly of Si nanocrystals with oriented crystals separated by a 1-monolayer amorphous layer with well-controlled nanoscale shaped interfaces. At these interfaces, novel phonon scattering occurs resulting in κ reduction below the amorphous limit. Preservation of bulk-like σ results from the coherency of the carrier wavefunctions among the oriented nanocrystals separated by the ultrathin amorphous layer. The results will bring environmentally-friendly and low-cost thermoelectric Si material compatible with mature LSI process technology and represent guidelines for optimized thermoelectric nanostructures. [Display omitted]
ISSN:2211-2855
DOI:10.1016/j.nanoen.2014.11.029