Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper

One challenge in moving to three-dimensional integrated circuit architectures is the need for aligned interconnects to join neighboring layers. Hsiao et al. (p. 1007 ) applied rapid stirring to the direct current electroplating of copper to produce films with oriented copper grains that have a high...

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Published inScience (American Association for the Advancement of Science) Vol. 336; no. 6084; pp. 1007 - 1010
Main Authors Hsiao, Hsiang-Yao, Liu, Chien-Min, Lin, Han-wen, Liu, Tao-Chi, Lu, Chia-Ling, Huang, Yi-Sa, Chen, Chih, Tu, K. N.
Format Journal Article
LanguageEnglish
Published Washington, DC American Association for the Advancement of Science 25.05.2012
The American Association for the Advancement of Science
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Summary:One challenge in moving to three-dimensional integrated circuit architectures is the need for aligned interconnects to join neighboring layers. Hsiao et al. (p. 1007 ) applied rapid stirring to the direct current electroplating of copper to produce films with oriented copper grains that have a high density of nanotwin defects. The resulting material was an excellent platform for the growth of copper-tin intermetallic compounds in the form of arrays of microbumps potentially suitable for the soldering of electronic components. Oriented copper grains grown using direct-current electroplating serve as a template for intermetallic microbumps. Highly oriented [111] Cu grains with densely packed nanotwins have been fabricated by direct-current electroplating with a high stirring rate. The [111]-oriented and nanotwinned Cu (nt-Cu) allow for the unidirectional growth of Cu 6 Sn 5 intermetallics in the microbumps of three-dimensional integrated-circuit packaging; a uniform microstructure in a large number of microbumps of controlled orientation can be obtained. The high-density twin boundaries in the nt-Cu serve as vacancy sinks during the solid-state reaction between Pb-free solder and Cu and greatly reduce the formation of Kirkendall (or Frenkel) voids.
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ISSN:0036-8075
1095-9203
1095-9203
DOI:10.1126/science.1216511