Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

• Published in: Current applied physics Vol. 13; no. 3; pp. 487 - 492
• Main Authors: Gomes, Umesh P., Chen, Yiqiao, Kabi, Sanjib, Chow, Peter, Biswas, Dhrubes
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2013; 한국물리학회
• Subjects: BTBT; Channel quantization; Devices; energy; Energy gap; engineering; High electron mobility transistors; Impact ionization; Indium gallium arsenides; Ionization; Leakage current; Quantum wells; Semiconductor devices; Strain; 물리학; Impact ionization; BTBT; Channel quantization; Strain

The performance of InAlAs/InGaAs quantum well field effect transistors are subject to high impact ionization and band-to-band tunneling (BTBT) due to its narrow bandgap feature. In this work, the energy gap is engineered using strain and quantization techniques to increase the effective energy gap l...