Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications - Gomes, Umesh P.; Chen, Yiqiao; Kabi, Sanjib; Chow, Peter; Biswas, Dhrubes (Current applied physics, 2013)
Keywords: BTBT; Channel quantization; Devices; energy; Energy gap; engineering; High electron mobility transistors; Impact ionization; Indium gallium arsenides; Ionization; Leakage current; Quantum wells; Semiconductor devices; Strain; 물리학; Impact ionization; BTBT; Channel quantization; Strain