Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer

The modification of the terminal electron‐donating groups induces a critical change in molecular aggregation and the intermolecular charge‐transfer effect of the symmetric D–A1–A2–A1–D molecules that correlate with an addressable variation of memory performance from binary to ternary.

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 27; no. 39; pp. 5968 - 5973
Main Authors Gu, Qian-Feng, He, Jing-Hui, Chen, Dong-Yun, Dong, Hui-Long, Li, You-Yong, Li, Hua, Xu, Qing-Feng, Lu, Jian-Mei
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 21.10.2015
Subjects
Agglomeration
Charge transfer
Conductance
Data storage
intermolecular charge transfer
Memory devices
Multilevel
multilevel conductance states
Switching
Terminals
intermolecular charge transfer
memory devices
multilevel conductance states
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Summary:The modification of the terminal electron‐donating groups induces a critical change in molecular aggregation and the intermolecular charge‐transfer effect of the symmetric D–A1–A2–A1–D molecules that correlate with an addressable variation of memory performance from binary to ternary.
Bibliography:istex:66C8CEA543D85C43684A7BDAEA47C8215D040D92
ark:/67375/WNG-T8VC1R6N-G
ArticleID:ADMA201502274
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201502274