Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 1014-7.1 × 1018 cm−3) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 8; pp. 88002 - 88005
Main Authors Asada, Satoshi, Suda, Jun, Kimoto, Tsunenobu
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.08.2018
Japanese Journal of Applied Physics
Subjects
Doping
Electrical resistivity
Mathematical analysis
Polynomials
Temperature dependence
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ISSN0021-4922
1347-4065
DOI10.7567/JJAP.57.088002

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Summary:Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 1014-7.1 × 1018 cm−3) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.088002