APA (7th ed.) Citation

Asada, S., Suda, J., & Kimoto, T. (2018). Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations. Japanese Journal of Applied Physics, 57(8), 88002-88005. https://doi.org/10.7567/JJAP.57.088002

Chicago Style (17th ed.) Citation

Asada, Satoshi, Jun Suda, and Tsunenobu Kimoto. "Analytical Formula for Temperature Dependence of Resistivity in P-type 4H-SiC with Wide-range Doping Concentrations." Japanese Journal of Applied Physics 57, no. 8 (2018): 88002-88005. https://doi.org/10.7567/JJAP.57.088002.

MLA (9th ed.) Citation

Asada, Satoshi, et al. "Analytical Formula for Temperature Dependence of Resistivity in P-type 4H-SiC with Wide-range Doping Concentrations." Japanese Journal of Applied Physics, vol. 57, no. 8, 2018, pp. 88002-88005, https://doi.org/10.7567/JJAP.57.088002.