Mott resistive switching initiated by topological defects - Milloch, Alessandra; Figueruelo-Campanero, Ignacio; Hsu, Wei-Fan; Mor, Selene; Mellaerts, Simon; Maccherozzi, Francesco; Veiga, Larissa S. I.; Dhesi, Sarnjeet S.; Spera, Mauro; Seo, Jin Won; Locquet, Jean-Pierre; Fabrizio, Michele; et al. (Nature communications, 2024)
Keywords: 639/766/1130/2798; 639/766/119/2792/4129; 639/766/119/2795; 639/766/119/995; Data processing; Defects; Electric fields; Electrical properties; Electron transitions; Humanities and Social Sciences; Information processing; Insulation; Metals; multidisciplinary; Neuroimaging; Order parameters; Phase transitions; Science; Science (multidisciplinary); Solid state devices; Topology; Transition metal oxides; Vanadium oxides; Working conditions; X ray imagery