Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes
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Published in | Micro and nanostructures (2022) Vol. 163; p. 107128 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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01.03.2022
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ArticleNumber | 107128 |
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Author | Li, Xiaohang Gu, Wen Liao, Che-Hao Yan, Jianchang Liu, Zhiyuan Lu, Yi Li, Jinmin Wang, Junxi |
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References | Götz (10.1016/j.spmi.2021.107128_bib1) 1996; 68 Xiong (10.1016/j.spmi.2021.107128_bib10) 2014; 312 Sun (10.1016/j.spmi.2021.107128_bib17) 2017; 11 Liu (10.1016/j.spmi.2021.107128_bib25) 2018 Chen (10.1016/j.spmi.2021.107128_bib11) 2013; vol. 8625 Enck (10.1016/j.spmi.2021.107128_bib20) 2015; 12 Lin (10.1016/j.spmi.2021.107128_bib13) 2020; 53 Wright (10.1016/j.spmi.2021.107128_bib3) 1995; 51 Chen (10.1016/j.spmi.2021.107128_bib5) 2016 Nam (10.1016/j.spmi.2021.107128_bib2) 2003; 83 Gu (10.1016/j.spmi.2021.107128_bib12) 2021; 54 Dong (10.1016/j.spmi.2021.107128_bib4) 2014; 395 Yim (10.1016/j.spmi.2021.107128_bib19) 1973; 44 Schubert (10.1016/j.spmi.2021.107128_bib21) 1996; 69 Goepfert (10.1016/j.spmi.2021.107128_bib22) 2000; 88 Zhang (10.1016/j.spmi.2021.107128_bib28) 2018; 13 Kozodoy (10.1016/j.spmi.2021.107128_bib6) 1999; 74 Sun (10.1016/j.spmi.2021.107128_bib15) 2017; 111 Vurgaftman (10.1016/j.spmi.2021.107128_bib23) 2003; 94 Abid (10.1016/j.spmi.2021.107128_bib16) 2012; 100 Liu (10.1016/j.spmi.2021.107128_bib26) 2017; 111 Ren (10.1016/j.spmi.2021.107128_bib27) 2019; 11 Kumakura (10.1016/j.spmi.2021.107128_bib7) 2000; 39 Zhang (10.1016/j.spmi.2021.107128_bib18) 2017; 254 Coughlan (10.1016/j.spmi.2021.107128_bib24) 2015; 252 Sun (10.1016/j.spmi.2021.107128_bib14) 2018; 458 Zheng (10.1016/j.spmi.2021.107128_bib9) 2016; 6 Ebata (10.1016/j.spmi.2021.107128_bib8) 2018; 57 |
References_xml | – volume: 111 start-page: 122106 issue: 12 year: 2017 ident: 10.1016/j.spmi.2021.107128_bib15 article-title: Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction publication-title: Appl. Phys. Lett. doi: 10.1063/1.4999249 – volume: 74 start-page: 3681 issue: 24 year: 1999 ident: 10.1016/j.spmi.2021.107128_bib6 article-title: Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices publication-title: Appl. Phys. Lett. doi: 10.1063/1.123220 – volume: 88 start-page: 2030 issue: 4 year: 2000 ident: 10.1016/j.spmi.2021.107128_bib22 article-title: Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices publication-title: J. Appl. Phys. doi: 10.1063/1.1305842 – volume: vol. 8625 start-page: 862526 year: 2013 ident: 10.1016/j.spmi.2021.107128_bib11 article-title: Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes – volume: 11 issue: 1 year: 2017 ident: 10.1016/j.spmi.2021.107128_bib17 article-title: Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures publication-title: APEX – volume: 94 start-page: 3675 issue: 6 year: 2003 ident: 10.1016/j.spmi.2021.107128_bib23 article-title: Band parameters for nitrogen-containing semiconductors publication-title: J. Appl. Phys. doi: 10.1063/1.1600519 – volume: 69 start-page: 3737 issue: 24 year: 1996 ident: 10.1016/j.spmi.2021.107128_bib21 article-title: Enhancement of deep acceptor activation in semiconductors by superlattice doping publication-title: Appl. Phys. Lett. doi: 10.1063/1.117206 – volume: 6 start-page: 1 issue: 1 year: 2016 ident: 10.1016/j.spmi.2021.107128_bib9 article-title: Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices publication-title: Sci. Rep. – volume: 395 start-page: 9 year: 2014 ident: 10.1016/j.spmi.2021.107128_bib4 article-title: AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2014.02.039 – volume: 100 issue: 5 year: 2012 ident: 10.1016/j.spmi.2021.107128_bib16 article-title: Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications publication-title: Appl. Phys. Lett. doi: 10.1063/1.3679703 – volume: 83 start-page: 878 issue: 5 year: 2003 ident: 10.1016/j.spmi.2021.107128_bib2 article-title: Mg acceptor level in AlN probed by deep ultraviolet photoluminescence publication-title: Appl. Phys. Lett. doi: 10.1063/1.1594833 – volume: 254 start-page: 1600749 issue: 8 year: 2017 ident: 10.1016/j.spmi.2021.107128_bib18 article-title: Structural and electronic properties of wurtzite BxAl1-xN from first-principles calculations publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201600749 – volume: 111 start-page: 222106 issue: 22 year: 2017 ident: 10.1016/j.spmi.2021.107128_bib26 article-title: Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering publication-title: Appl. Phys. Lett. doi: 10.1063/1.5008451 – volume: 51 start-page: 7866 issue: 12 year: 1995 ident: 10.1016/j.spmi.2021.107128_bib3 article-title: Consistent structural properties for AlN, GaN, and InN publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.51.7866 – volume: 458 start-page: 949 year: 2018 ident: 10.1016/j.spmi.2021.107128_bib14 article-title: Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2018.07.178 – volume: 13 start-page: 1 issue: 1 year: 2018 ident: 10.1016/j.spmi.2021.107128_bib28 article-title: Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency publication-title: Nanoscale Res. Lett. – volume: 53 start-page: 48LT01 issue: 48 year: 2020 ident: 10.1016/j.spmi.2021.107128_bib13 article-title: BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures publication-title: J. Phys. D Appl. Phys. doi: 10.1088/1361-6463/aba4d5 – volume: 12 start-page: 434 issue: 4–5 year: 2015 ident: 10.1016/j.spmi.2021.107128_bib20 article-title: Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices publication-title: Phys. Status Solidi C doi: 10.1002/pssc.201400208 – start-page: 123 year: 2016 ident: 10.1016/j.spmi.2021.107128_bib5 article-title: Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD – volume: 44 start-page: 292 issue: 1 year: 1973 ident: 10.1016/j.spmi.2021.107128_bib19 article-title: Epitaxially grown AlN and its optical band gap publication-title: J. Appl. Phys. doi: 10.1063/1.1661876 – volume: 57 issue: 4S year: 2018 ident: 10.1016/j.spmi.2021.107128_bib8 article-title: High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content publication-title: Jpn. J. Appl. Phys. doi: 10.7567/JJAP.57.04FH09 – year: 2018 ident: 10.1016/j.spmi.2021.107128_bib25 – volume: 11 start-page: 8200511 issue: 2 year: 2019 ident: 10.1016/j.spmi.2021.107128_bib27 article-title: III-nitride deep UV LED without electron blocking layer publication-title: IEEE Photonics J. doi: 10.1109/JPHOT.2019.2902125 – volume: 312 start-page: 85 year: 2014 ident: 10.1016/j.spmi.2021.107128_bib10 article-title: Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier publication-title: Opt Commun. doi: 10.1016/j.optcom.2013.08.053 – volume: 252 start-page: 879 issue: 5 year: 2015 ident: 10.1016/j.spmi.2021.107128_bib24 article-title: Band gap bowing and optical polarization switching in AlGaN alloys publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201451593 – volume: 39 start-page: 2428 issue: 4B year: 2000 ident: 10.1016/j.spmi.2021.107128_bib7 article-title: Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.39.2428 – volume: 68 start-page: 667 issue: 5 year: 1996 ident: 10.1016/j.spmi.2021.107128_bib1 article-title: Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition publication-title: Appl. Phys. Lett. doi: 10.1063/1.116503 – volume: 54 start-page: 175104 issue: 17 year: 2021 ident: 10.1016/j.spmi.2021.107128_bib12 article-title: BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer publication-title: J. Phys. D Appl. Phys. doi: 10.1088/1361-6463/abdefc |
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