APA (7th ed.) Citation

Gu, W., Lu, Y., Liu, Z., Liao, C., Yan, J., Wang, J., . . . Li, X. (2022). Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes. Micro and nanostructures (2022), 163, 107128. https://doi.org/10.1016/j.spmi.2021.107128

Chicago Style (17th ed.) Citation

Gu, Wen, Yi Lu, Zhiyuan Liu, Che-Hao Liao, Jianchang Yan, Junxi Wang, Jinmin Li, and Xiaohang Li. "Enhanced Hole Concentration in Strain-compensated BAlN/AlGaN Superlattice for Deep Ultraviolet Light-emitting Diodes." Micro and Nanostructures (2022) 163 (2022): 107128. https://doi.org/10.1016/j.spmi.2021.107128.

MLA (9th ed.) Citation

Gu, Wen, et al. "Enhanced Hole Concentration in Strain-compensated BAlN/AlGaN Superlattice for Deep Ultraviolet Light-emitting Diodes." Micro and Nanostructures (2022), vol. 163, 2022, p. 107128, https://doi.org/10.1016/j.spmi.2021.107128.