Carbon nanotube applications in microelectronics

• Published in: IEEE transactions on components and packaging technologies Vol. 27; no. 4; pp. 629 - 634
• Main Authors: Hoenlein, W., Kreupl, F., Duesberg, G.S., Graham, A.P., Liebau, M., Seidel, R.V., Unger, E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Atomic layer deposition; Carbon nanotube field effect transistors (CNTFETs); Carbon nanotubes; Chemical vapor deposition; chemical vapor deposition (CVD); Deposition; Electron tubes; FETs; Field effect transistors; metal oxide semiconductor field effect transistors (MOSFETs); Metal oxide semiconductors; Microelectronics; Scattering; Semiconductivity; Semiconductor devices; Semiconductor nanotubes; Simulation; Thermal conductivity; Tubes
• ISSN: 1521-3331; 1557-9972
• DOI: 10.1109/TCAPT.2004.838876

The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor deposition growth is very well suited for selective in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFET). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon metal oxide semiconductor field effect transistors and discuss integration issues.