Comb Capacitor Structures for On-Chip Physical Uncloneable Function
Planar inter-digitated comb capacitor structures are an excellent tool for on-chip capacitance measurement and evaluation of properties of coating layers with varying composition. These comb structures are easily fabricated in a single step in the last metallization layer of a standard IC process. C...
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Published in | IEEE transactions on semiconductor manufacturing Vol. 22; no. 1; pp. 96 - 102 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.2009
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Planar inter-digitated comb capacitor structures are an excellent tool for on-chip capacitance measurement and evaluation of properties of coating layers with varying composition. These comb structures are easily fabricated in a single step in the last metallization layer of a standard IC process. Capacitive coupling of these structures with a coating layer is modelled based on the electric field distribution to have a detailed understanding of contributing capacitance components. The coating composition is optimized to provide maximum spread in capacitance values of comb capacitor structures. This spread in measured capacitance values can be used to implement a physical uncloneable function (PUF). A PUF is a random function which can be evaluated only with the help of a physical system. We present an on-chip capacitive PUF for chip security and data storage in which the unlock key algorithm is generated from capacitors which are physically linked to the chip in an inseparable way. The strength of this key increases with the spread in capacitance values and measurement accuracy. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0894-6507 1558-2345 |
DOI: | 10.1109/TSM.2008.2010738 |