APA (7th ed.) Citation

Ielmini, D. (2016). Resistive switching memories based on metal oxides: Mechanisms, reliability and scaling. Semiconductor science and technology, 31(6), 63002-63026. https://doi.org/10.1088/0268-1242/31/6/063002

Chicago Style (17th ed.) Citation

Ielmini, Daniele. "Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling." Semiconductor Science and Technology 31, no. 6 (2016): 63002-63026. https://doi.org/10.1088/0268-1242/31/6/063002.

MLA (9th ed.) Citation

Ielmini, Daniele. "Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling." Semiconductor Science and Technology, vol. 31, no. 6, 2016, pp. 63002-63026, https://doi.org/10.1088/0268-1242/31/6/063002.