The 2020 UV emitter roadmap

• Published in: Journal of physics. D, Applied physics Vol. 53; no. 50; pp. 503001 - 503057
• Main Authors: Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J, Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J, Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, Zhang, Yuewei
• Format: Journal Article
• Language: English
• Published: United Kingdom IOP Publishing 09.12.2020
• Subjects: AlGaN; Engineering Sciences; InGaN; light emitting diodes; ultraviolet; UV-LED

Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm-due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a...