A Blueprint for the Synthesis and Characterization of Thiolated Graphene
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of...
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Published in | Nanomaterials (Basel, Switzerland) Vol. 12; no. 1; p. 45 |
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Main Authors | , , , , , , , , , , , , , , , , |
Format | Journal Article |
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24.12.2021
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Abstract | Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials. |
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AbstractList | Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials. Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials. |
Author | Kvashenkina, Olga E. Rabchinskii, Maxim K. Solomatin, Maksim A. Gabdullin, Pavel G. Mishin, Maxim V. Struchkov, Nikolai S. Varezhnikov, Alexey S. Ryzhkov, Sergei A. Palenov, Mihail E. Antonov, Grigorii A. Brzhezinskaya, Maria Pavlov, Sergei I. Kirilenko, Demid A. Eliseyev, Ilya A. Brunkov, Pavel N. Sysoev, Victor V. Stolyarova, Dina Yu |
AuthorAffiliation | 1 Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; ryzhkov@mail.ioffe.ru (S.A.R.); Ilya.Eliseyev@mail.ioffe.ru (I.A.E.); antonov@mail.ioffe.ru (G.A.A.); Demid.Kirilenko@mail.ioffe.ru (D.A.K.); Pavlov_sergey@mail.ioffe.ru (S.I.P.); Brunkov@mail.ioffe.ru (P.N.B.) 5 Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany; maria.brzhezinskaya@helmholtz-berlin.de 6 Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; m.e.palenov@gmail.com (M.E.P.); max@mail.spbstu.ru (M.V.M.); kvol.spbspu@gmail.com (O.E.K.); gabdullin_pg@spbstu.ru (P.G.G.) 3 National Research Centre “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia; stolyarova.d@gmail.com 4 Center for Probe Microscopy and Nanotechnology, National Research University of Electronic Technology, Bld. 1, Shokin Square, 124498 Moscow, Russia; str |
AuthorAffiliation_xml | – name: 3 National Research Centre “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia; stolyarova.d@gmail.com – name: 6 Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; m.e.palenov@gmail.com (M.E.P.); max@mail.spbstu.ru (M.V.M.); kvol.spbspu@gmail.com (O.E.K.); gabdullin_pg@spbstu.ru (P.G.G.) – name: 5 Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany; maria.brzhezinskaya@helmholtz-berlin.de – name: 1 Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; ryzhkov@mail.ioffe.ru (S.A.R.); Ilya.Eliseyev@mail.ioffe.ru (I.A.E.); antonov@mail.ioffe.ru (G.A.A.); Demid.Kirilenko@mail.ioffe.ru (D.A.K.); Pavlov_sergey@mail.ioffe.ru (S.I.P.); Brunkov@mail.ioffe.ru (P.N.B.) – name: 2 Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia; vsysoev@sstu.ru (V.V.S.); alexspb88@mail.ru (A.S.V.); solomatin1994@gmail.com (M.A.S.) – name: 4 Center for Probe Microscopy and Nanotechnology, National Research University of Electronic Technology, Bld. 1, Shokin Square, 124498 Moscow, Russia; struchkov.nikolaj@gmail.com |
Author_xml | – sequence: 1 givenname: Maxim K. orcidid: 0000-0003-4264-7147 surname: Rabchinskii fullname: Rabchinskii, Maxim K. – sequence: 2 givenname: Victor V. orcidid: 0000-0002-0372-1802 surname: Sysoev fullname: Sysoev, Victor V. – sequence: 3 givenname: Sergei A. surname: Ryzhkov fullname: Ryzhkov, Sergei A. – sequence: 4 givenname: Ilya A. orcidid: 0000-0001-9980-6191 surname: Eliseyev fullname: Eliseyev, Ilya A. – sequence: 5 givenname: Dina Yu surname: Stolyarova fullname: Stolyarova, Dina Yu – sequence: 6 givenname: Grigorii A. surname: Antonov fullname: Antonov, Grigorii A. – sequence: 7 givenname: Nikolai S. orcidid: 0000-0002-7382-8058 surname: Struchkov fullname: Struchkov, Nikolai S. – sequence: 8 givenname: Maria surname: Brzhezinskaya fullname: Brzhezinskaya, Maria – sequence: 9 givenname: Demid A. orcidid: 0000-0002-1571-209X surname: Kirilenko fullname: Kirilenko, Demid A. – sequence: 10 givenname: Sergei I. orcidid: 0000-0001-9589-8017 surname: Pavlov fullname: Pavlov, Sergei I. – sequence: 11 givenname: Mihail E. surname: Palenov fullname: Palenov, Mihail E. – sequence: 12 givenname: Maxim V. surname: Mishin fullname: Mishin, Maxim V. – sequence: 13 givenname: Olga E. surname: Kvashenkina fullname: Kvashenkina, Olga E. – sequence: 14 givenname: Pavel G. orcidid: 0000-0002-2519-2577 surname: Gabdullin fullname: Gabdullin, Pavel G. – sequence: 15 givenname: Alexey S. orcidid: 0000-0002-0896-9102 surname: Varezhnikov fullname: Varezhnikov, Alexey S. – sequence: 16 givenname: Maksim A. surname: Solomatin fullname: Solomatin, Maksim A. – sequence: 17 givenname: Pavel N. orcidid: 0000-0002-3400-4654 surname: Brunkov fullname: Brunkov, Pavel N. |
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CitedBy_id | crossref_primary_10_3390_nano13010023 crossref_primary_10_1016_j_jallcom_2025_179386 crossref_primary_10_3390_encyclopedia4040120 crossref_primary_10_1063_5_0159624 crossref_primary_10_1021_acsami_4c21591 crossref_primary_10_3390_s23135780 crossref_primary_10_1016_j_nxmate_2024_100205 |
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Copyright | 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. 2021 by the authors. 2021 |
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Keywords | functionalization graphene derivatives valence band Mott conductivity 2D materials gas sensor thiols graphene |
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SubjectTerms | 2D materials Carbon Caustic soda Chemical properties Chemistry Energy storage Ethanol functionalization Graphene graphene derivatives Liquid phases Nanomaterials Nanotechnology Sensors Smart materials Sodium Thiols Valence band Vapors Work functions |
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