Reliability of InP-based HBT IC technology for high-speed, low-power applications

• Published in: IEEE transactions on microwave theory and techniques Vol. 43; no. 12; pp. 3048 - 3054
• Main Authors: Hafizi, M., Stanchina, W.E., Williams, F., Jensen, J.F.
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.1995
• Subjects: Acceleration; Heterojunction bipolar transistors; High speed integrated circuits; Hydrogen; Integrated circuit reliability; Integrated circuit technology; Power integrated circuits; Resistors; Thin film circuits; Thin film transistors

We report on the reliability of an InP-based AlInAs/GaInAs heterojunction bipolar transistor technology which has applications in very high-speed and low power integrated circuits. We have performed extensive accelerated lifetest experiments under different dc bias conditions and different ambient t...