Reliability of InP-based HBT IC technology for high-speed, low-power applications
We report on the reliability of an InP-based AlInAs/GaInAs heterojunction bipolar transistor technology which has applications in very high-speed and low power integrated circuits. We have performed extensive accelerated lifetest experiments under different dc bias conditions and different ambient t...
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Published in | IEEE transactions on microwave theory and techniques Vol. 43; no. 12; pp. 3048 - 3054 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.12.1995
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Subjects | |
Online Access | Get full text |
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