Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

• Published in: Journal of crystal growth Vol. 403; pp. 77 - 82
• Main Authors: Weyher, J.L., Sochacki, T., Amilusik, M., Fijałkowski, M., Łucznik, B., Jakieła, R., Staszczak, G., Nikolenko, A., Strelchuk, V., Sadovyi, B., Boćkowski, M., Grzegory, I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2014; Elsevier
• Subjects: A1. Crystal structure; A1. Etching; B1. Nitrides; B2. Semiconductor III-V Materials; Carrier density; Carriers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal defects; Exact sciences and technology; Gallium nitrides; Gas composition; Gas exchange; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Photoluminescence; Physics; Secondary ion mass spectrometry; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Vapor phase epitaxy; growth from vapor phase; A1. Etching; B1. Nitrides; A1. Crystal structure; B2. Semiconductor III-V Materials; Luminescence; Photoluminescence; Photoetching; Secondary ion mass spectrometry; VPE; Hydrides; Raman spectroscopy; Physical properties; III-V compound; Nitrides; Optical properties; Cleavage; Selective etching; Carrier density; Impurity states; III-V semiconductors; Crystal structure

The influence of periodic changes of carrier gas composition (H2 and N2+10%H2) on structural and physical properties of GaN crystals grown by Hydride Vapor Phase Epitaxy (HVPE) was studied using photo-etching, defect-selective etching (DSE), secondary ions mass spectroscopy (SIMS), low temperature p...