High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

High‐mobility organic thin film transistors based on a benzobisthiadiazole‐containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge‐on” orientated polymer chains is observed in their thin films after annealing, and the hole mobi...

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Published inAdvanced materials (Weinheim) Vol. 24; no. 46; pp. 6164 - 6168
Main Authors Fan, Jian, Yuen, Jonathan D., Cui, Weibin, Seifter, Jason, Mohebbi, Ali Reza, Wang, Mingfeng, Zhou, Huiqiong, Heeger, Alan, Wudl, Fred
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 04.12.2012
WILEY‐VCH Verlag
Subjects
charge transport
conjugated polymers
Microscopy, Atomic Force
polymeric materials
Polymers - chemical synthesis
Polymers - chemistry
Spectrophotometry
Thiadiazoles - chemistry
thin films
Thiophenes - chemistry
Transistors, Electronic
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Summary:High‐mobility organic thin film transistors based on a benzobisthiadiazole‐containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge‐on” orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm2 V−1 s−1.
Bibliography:istex:0194E8668BA62EC55142A963C05B4446EDECC486
ArticleID:ADMA201202195
ark:/67375/WNG-J249ZBH7-J
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201202195