Resistive Switching of Plasma-Treated Zinc Oxide Nanowires for Resistive Random Access Memory

ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW-based memory cell with a Ti/ZnO/Ti structure was then fabricated to investi...

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Published inNanomaterials (Basel, Switzerland) Vol. 6; no. 1; p. 16
Main Authors Lai, Yunfeng, Qiu, Wenbiao, Zeng, Zecun, Cheng, Shuying, Yu, Jinling, Zheng, Qiao
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 13.01.2016
MDPI
Subjects
Nanomaterials
Nanowires
Plasma
plasma treatment
Random access memory
Reproducibility
resistive switching
self-rectification
Zinc oxides
ZnO nanowires
China
self-rectification
ZnO nanowires
plasma treatment
resistive switching
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Abstract ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW-based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW-based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell.
AbstractList ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW-based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW-based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell.
Author Cheng, Shuying
Yu, Jinling
Qiu, Wenbiao
Zeng, Zecun
Zheng, Qiao
Lai, Yunfeng
AuthorAffiliation 2 Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, China
1 School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China; albert_29@163.com (W.Q.); zecunzeng@163.com (Z.Z.); sycheng@fzu.edu.cn (S.C.); jlyu@semi.ac.cn (J.Y.); 2004_zhengqiao@163.com (Q.Z.)
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/28344273$$D View this record in MEDLINE/PubMed
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Keywords self-rectification
ZnO nanowires
plasma treatment
resistive switching
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SubjectTerms Nanomaterials
Nanowires
Plasma
plasma treatment
Random access memory
Reproducibility
resistive switching
self-rectification
Zinc oxides
ZnO nanowires
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Title Resistive Switching of Plasma-Treated Zinc Oxide Nanowires for Resistive Random Access Memory
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