Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies

Sputtering of silicon in a He magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e., He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect, producing inc...

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Published inNanomaterials (Basel, Switzerland) Vol. 14; no. 8; p. 727
Main Authors Fernández, Asunción, Godinho, Vanda, Ávila, José, Jiménez de Haro, M Carmen, Hufschmidt, Dirk, López-Viejobueno, Jennifer, Almanza-Vergara, G Eduardo, Ferrer, F Javier, Colaux, Julien L, Lucas, Stephane, Asensio, M Carmen
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LanguageEnglish
Published Switzerland MDPI AG 21.04.2024
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Abstract Sputtering of silicon in a He magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e., He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect, producing increased Ne and Ar incorporations when using He-Ne and He-Ar gas mixtures in the MS process. Microstructural and chemical characterizations are reported using ion beam analysis (IBA) and scanning and transmission electron microscopies (SEM and TEM). In addition to gas incorporation, He promotes the formation of larger nanobubbles. In the case of Ne, high-resolution X-ray photoelectron and absorption spectroscopies (XPS and XAS) are reported, with remarkable dependence of the Ne 1s photoemission and the Ne K-edge absorption on the nanobubble's size and composition. The gas (He, Ne and Ar)-charged thin films are proposed as "solid" targets for the characterization of spectroscopic properties of noble gases in a confined state without the need for cryogenics or high-pressure anvils devices. Also, their use as targets for nuclear reaction studies is foreseen.
AbstractList Sputtering of silicon in a He magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e., He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect, producing increased Ne and Ar incorporations when using He–Ne and He–Ar gas mixtures in the MS process. Microstructural and chemical characterizations are reported using ion beam analysis (IBA) and scanning and transmission electron microscopies (SEM and TEM). In addition to gas incorporation, He promotes the formation of larger nanobubbles. In the case of Ne, high-resolution X-ray photoelectron and absorption spectroscopies (XPS and XAS) are reported, with remarkable dependence of the Ne 1s photoemission and the Ne K-edge absorption on the nanobubble’s size and composition. The gas (He, Ne and Ar)-charged thin films are proposed as “solid” targets for the characterization of spectroscopic properties of noble gases in a confined state without the need for cryogenics or high-pressure anvils devices. Also, their use as targets for nuclear reaction studies is foreseen.
Audience Academic
Author Lucas, Stephane
Ávila, José
Hufschmidt, Dirk
Jiménez de Haro, M Carmen
Almanza-Vergara, G Eduardo
Ferrer, F Javier
Fernández, Asunción
Godinho, Vanda
López-Viejobueno, Jennifer
Colaux, Julien L
Asensio, M Carmen
AuthorAffiliation 3 Centro Nacional de Aceleradores (Univ. Seville, J. Andalucía, CSIC), Av. Tomas Alva Edison 7, 41092 Seville, Spain; fjferrer@us.es
6 Madrid Institute of Materials Science (ICMM), CSIC, Cantoblanco, 28049 Madrid, Spain
5 Laboratoire d’Analyse par Réactions Nucléaires (LARN), Namur Institute of Structured Matter (NISM), University of Namur, 61 Rue de Bruxeles, 5000 Namur, Belgium; julien.colaux@unamur.be (J.L.C.); stephane.lucas@unamur.be (S.L.)
4 Departamento de FAMN (Univ. Seville), Aptd. 1065, 41012 Seville, Spain
1 Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Seville), Avda. Américo Vespucio 49, 41092 Seville, Spain; godinho@icmse.csic.es (V.G.); cjimenez@icmse.csic.es (M.C.J.d.H.); dirk@icmse.csic.es (D.H.); jennilop@ucm.es (J.L.-V.); gealmanzav@unal.edu.co (G.E.A.-V.)
2 Synchrotron SOLEIL, Universite Paris-Saclay, L’ Orme des Merisiers, BP48, 91190 Saint-Aubin, France; jose.avila@synchrotron-soleil.fr (J.Á.); mc.asensio@csic.es (M.C.A.)
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Issue 8
Keywords microstructural characterization
magnetron sputtering
gas-charged Si films
Ne, Ar and He solid targets
IBA analysis
XPS and XAS spectroscopic analyses
Language English
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SSID ssj0000913853
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Snippet Sputtering of silicon in a He magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e., He nanobubbles...
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StartPage 727
SubjectTerms Absorption
Analytical techniques
Argon
Carbon
Dielectric films
Electron microscopy
Energy
Fabrication
Gas mixtures
gas-charged Si films
Gases
Growth models
Helium
IBA analysis
Ion beams
magnetron sputtering
microstructural characterization
Ne, Ar and He solid targets
Neon
Nuclear reactions
Photoelectric emission
Photoelectrons
Properties
Rare gases
Scanning electron microscopy
Scanning microscopy
Silicon
Silicon films
Silicon wafers
Spectra
Structure
Synergistic effect
Thin films
X ray photoelectron spectroscopy
XPS and XAS spectroscopic analyses
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Title Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies
URI https://www.ncbi.nlm.nih.gov/pubmed/38668221
https://www.proquest.com/docview/3046998189/abstract/
https://search.proquest.com/docview/3047938936
https://pubmed.ncbi.nlm.nih.gov/PMC11053770
https://doaj.org/article/c74a44816f094c95bbcd8c74f1e8cad6
Volume 14
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