Oxide spin-orbitronics: New routes towards low-power electrical control of magnetization in oxide heterostructures

The transition metal oxide family harbors various types of materials of interest for spintronics: half-metallic manganites are highly efficient spin injectors and detectors, yielding record values of tunnel magnetoresistance; multiferroic materials, and in particular BiFeO3, allow the electrical con...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 9; pp. 902 - 908
Main Authors Vaz, Diogo Castro, Barthélémy, Agnès, Bibes, Manuel
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.09.2018
Japanese Journal of Applied Physics
Japan Society of Applied Physics
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Summary:The transition metal oxide family harbors various types of materials of interest for spintronics: half-metallic manganites are highly efficient spin injectors and detectors, yielding record values of tunnel magnetoresistance; multiferroic materials, and in particular BiFeO3, allow the electrical control of magnetization and spin excitations at room temperature; combined with ferromagnets, piezoelectric perovskites enable a controlled tuning of magnetic anisotropy, domain dynamics and even magnetic order. In this review, we argue that a new opportunity is emerging for oxides in spintronics with the rise of spin-orbit-driven phenomena such as the direct and inverse spin Hall and Rashba-Edelstein effects. After surveying the few results reported on inverse spin Hall measurements in oxide materials, we describe in depth the physics of SrTiO3-based interfaces and their usage for both spin-to-charge and charge-to-spin conversion. Finally, we give perspectives for a more thorough exploration of spin Hall effects in oxides and enhanced conversion ratios in both three- and two-dimensional structures.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.0902A4