Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms
The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was...
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| Published in | Nanomaterials (Basel, Switzerland) Vol. 9; no. 6; p. 905 |
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| Abstract | The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method. |
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| AbstractList | The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method. The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of / (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method. The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d 33 / d 31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method. The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method.The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method. |
| Author | Wang, Bing Habeeb, Ammar Long, Hua Kinyua, Dickson Wang, Kai Lu, Peixiang |
| AuthorAffiliation | 3 Hubei Key Laboratory of Optical information and Pattern Recognition, Wuhan Institute of Technology Wuhan 430205, China 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; I201622178@hust.edu.cn (D.M.K.); kale_wong@hust.edu.cn (K.W.); wangbing@hust.edu.cn (B.W.) 2 Physics Department of College Science, Diyala University, Baqubah 964, Iraq; ammarlaser72@yahoo.com |
| AuthorAffiliation_xml | – name: 3 Hubei Key Laboratory of Optical information and Pattern Recognition, Wuhan Institute of Technology Wuhan 430205, China – name: 2 Physics Department of College Science, Diyala University, Baqubah 964, Iraq; ammarlaser72@yahoo.com – name: 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; I201622178@hust.edu.cn (D.M.K.); kale_wong@hust.edu.cn (K.W.); wangbing@hust.edu.cn (B.W.) |
| Author_xml | – sequence: 1 givenname: Hua surname: Long fullname: Long, Hua – sequence: 2 givenname: Ammar surname: Habeeb fullname: Habeeb, Ammar – sequence: 3 givenname: Dickson surname: Kinyua fullname: Kinyua, Dickson – sequence: 4 givenname: Kai surname: Wang fullname: Wang, Kai – sequence: 5 givenname: Bing surname: Wang fullname: Wang, Bing – sequence: 6 givenname: Peixiang surname: Lu fullname: Lu, Peixiang |
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| CitedBy_id | crossref_primary_10_1088_1402_4896_ab99f7 crossref_primary_10_1021_acsanm_2c02159 crossref_primary_10_1088_1361_6463_ad4a80 crossref_primary_10_1016_j_surfin_2023_103236 crossref_primary_10_1016_j_surfin_2022_102541 crossref_primary_10_1016_j_heliyon_2024_e39836 crossref_primary_10_3390_nano9101427 |
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| Keywords | ZnO nanofilms Ga doping SHG polarization angle |
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| Snippet | The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the... |
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| SubjectTerms | Crystal structure Distortion Doping Ga doping Gallium Incident light Laboratories Lasers Luminous intensity Microscopy Nanomaterials Nanoparticles Nanotechnology Nanowires Nondestructive testing Polarimetry polarization angle Second harmonic generation SHG Spectrum analysis Symmetry Thin films Zinc oxide Zinc oxides ZnO nanofilms |
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| Title | Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms |
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