High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

• Published in: Scientific reports Vol. 8; no. 1; pp. 8300 - 11
• Main Authors: Chen, Yi-Ting, Sarangadharan, Indu, Sukesan, Revathi, Hseih, Ching-Yen, Lee, Geng-Yen, Chyi, Jen-Inn, Wang, Yu-Lin
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.05.2018; Nature Publishing Group
• Subjects: 639/166/898; 639/166/987; 639/925/929/170; Electrodes; Humanities and Social Sciences; Ions; Lead; multidisciplinary; Science; Science (multidisciplinary); Sensors

Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (−36 mV/log [Pb 2+ ]) surpassing the limit of ideal sensitivity (−29.58 mV/log [Pb 2+...