Current Status and Future Trends of GaN HEMTs in Electrified Transportation

• Published in: IEEE access Vol. 8; p. 1
• Main Authors: Keshmiri, Niloufar, Wang, Deqiang, Agrawal, Bharat, Hou, Ruoyu, Emadi, Ali
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.01.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Electric vehicle; Electric vehicles; Electrification; Gallium nitride; Gallium nitrides; HEMTs; high electron mobility transistor; High electron mobility transistors; hybrid electric vehicle; Material properties; MODFETs; MOSFET; Packaging design; Passive components; Powertrain; Semiconductor devices; Silicon; Silicon carbide; Switches; Thermal management; Transportation industry; Trends; Vehicles; wide bandgap devices

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detaile...