Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device

• Published in: Materials Vol. 12; no. 14; p. 2289
• Main Authors: Kim, Minkyong, Han, Chang-Yeol, Yang, Heesun, Park, Byoungnam
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 17.07.2019; MDPI
• Subjects: Acids; Carrier injection; Charge efficiency; Charge transfer; Contact resistance; Efficiency; Electric contacts; Electrical resistance; Electrodes; Energy; Engineering; field effect transistor; Geometry; Lead selenides; Ligands; Light emitting diodes; localized states; Optimization; PbSe; quantum dot; Quantum dots; Transmission lines; Zinc oxide; Zinc oxides; ZnO; quantum dot; PbSe; ZnO; field effect transistor; charge transfer; localized states

We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of tempera...