Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device

We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of tempera...

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Published inMaterials Vol. 12; no. 14; p. 2289
Main Authors Kim, Minkyong, Han, Chang-Yeol, Yang, Heesun, Park, Byoungnam
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 17.07.2019
MDPI
Subjects
Acids
Carrier injection
Charge efficiency
Charge transfer
Contact resistance
Efficiency
Electric contacts
Electrical resistance
Electrodes
Energy
Engineering
field effect transistor
Geometry
Lead selenides
Ligands
Light emitting diodes
localized states
Optimization
PbSe
quantum dot
Quantum dots
Transmission lines
Zinc oxide
Zinc oxides
ZnO
quantum dot
PbSe
ZnO
field effect transistor
charge transfer
localized states
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Abstract We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of temperature. Using the transmission line method (TLM) in a ZnO/PbSe/ZnO geometry device, we measured the ZnO/PbSe electrical contact resistance, a measure of charge transfer efficiency. Fabrication of a highly conductive ZnO film through Al doping allows for the formation of ZnO source and drain electrodes, replacing conventional metal electrodes. We found that band to band tunneling at the PbSe QD/ZnO interface governs charge transfer based on temperature-independent PbSe QD/ZnO contact resistance. In contrast, the PbSe QD channel sheet resistance decreased as the temperature increased, indicating thermally activated transport process in the PbSe QD film. These results demonstrate that, at the ZnO/PbSe QD interface, temperature-independent tunneling process initiates carrier injection followed by thermally activated carrier hopping, determining the electrical contact resistance.
AbstractList We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of temperature. Using the transmission line method (TLM) in a ZnO/PbSe/ZnO geometry device, we measured the ZnO/PbSe electrical contact resistance, a measure of charge transfer efficiency. Fabrication of a highly conductive ZnO film through Al doping allows for the formation of ZnO source and drain electrodes, replacing conventional metal electrodes. We found that band to band tunneling at the PbSe QD/ZnO interface governs charge transfer based on temperature-independent PbSe QD/ZnO contact resistance. In contrast, the PbSe QD channel sheet resistance decreased as the temperature increased, indicating thermally activated transport process in the PbSe QD film. These results demonstrate that, at the ZnO/PbSe QD interface, temperature-independent tunneling process initiates carrier injection followed by thermally activated carrier hopping, determining the electrical contact resistance.
Author Yang, Heesun
Park, Byoungnam
Kim, Minkyong
Han, Chang-Yeol
AuthorAffiliation Department of Materials Science and Engineering, Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea
AuthorAffiliation_xml – name: Department of Materials Science and Engineering, Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea
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  givenname: Minkyong
  surname: Kim
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  givenname: Chang-Yeol
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  surname: Yang
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  givenname: Byoungnam
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  email: hyang@hongik.ac.kr
  organization: Department of Materials Science and Engineering, Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea. hyang@hongik.ac.kr
BackLink https://www.ncbi.nlm.nih.gov/pubmed/31319559$$D View this record in MEDLINE/PubMed
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Issue 14
Keywords quantum dot
PbSe
ZnO
field effect transistor
charge transfer
localized states
Language English
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Snippet We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band...
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StartPage 2289
SubjectTerms Acids
Carrier injection
Charge efficiency
Charge transfer
Contact resistance
Efficiency
Electric contacts
Electrical resistance
Electrodes
Energy
Engineering
field effect transistor
Geometry
Lead selenides
Ligands
Light emitting diodes
localized states
Optimization
PbSe
quantum dot
Quantum dots
Transmission lines
Zinc oxide
Zinc oxides
ZnO
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Title Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device
URI https://www.ncbi.nlm.nih.gov/pubmed/31319559
https://www.proquest.com/docview/2548629384
https://search.proquest.com/docview/2261236826
https://pubmed.ncbi.nlm.nih.gov/PMC6678409
https://doaj.org/article/2b6f557b1c89467aba99fc6e5a648cca
Volume 12
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