Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO 2 /WTe 2 ) Exhibiting Stable Resistive Switching

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices...

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Published inMaterials Vol. 14; no. 24; p. 7535
Main Authors Dastgeer, Ghulam, Afzal, Amir Muhammad, Aziz, Jamal, Hussain, Sajjad, Jaffery, Syed Hassan Abbas, Kim, Deok-Kee, Imran, Muhammad, Assiri, Mohammed Ali
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 08.12.2021
MDPI
Subjects
2D-materials
Computer storage devices
Data storage
Electrodes
flexible devices
Gold
Graphene
Heterostructures
Memory devices
memristor
Metal oxides
Metallizing
Polyethylene terephthalate
Power consumption
resistive switching
Silver
Spectrum analysis
Substrates
Switching
Tin dioxide
transparent
Two dimensional materials
2D-materials
resistive switching
flexible devices
transparent
memristor
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Summary:Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO /WTe ) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO /WTe /Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO /WTe improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.
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ISSN:1996-1944
1996-1944
DOI:10.3390/ma14247535