Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-dope...

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Published inAPL materials Vol. 12; no. 2; pp. 021114 - 021114-8
Main Authors Armakavicius, Nerijus, Knight, Sean, Kühne, Philipp, Stanishev, Vallery, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Stokey, Megan, Sorensen, Preston, Kilic, Ufuk, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya
Format Journal Article
LanguageEnglish
Published AIP Publishing LLC 01.02.2024
Subjects
Condensed Matter Physics
Den kondenserade materiens fysik
Fysik
Natural Sciences
Naturvetenskap
Physical Sciences
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Abstract Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38–340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 ± 0.02) m0 to (0.34 ± 0.01) m0 at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 ± 0.002) m0. A possible explanation for the different findings from THz OHE and MIR OHE is proposed.
AbstractList Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38–340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 ± 0.02) m0 to (0.34 ± 0.01) m0 at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 ± 0.002) m0. A possible explanation for the different findings from THz OHE and MIR OHE is proposed.
Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 ± 0.02) m0 to (0.34 ± 0.01) m0 at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 ± 0.002) m0. A possible explanation for the different findings from THz OHE and MIR OHE is proposed.
Author Kilic, Ufuk
Knight, Sean
Paskov, Plamen P.
Sorensen, Preston
Schubert, Mathias
Kühne, Philipp
Stokey, Megan
Tran, Dat Q.
Richter, Steffen
Armakavicius, Nerijus
Darakchieva, Vanya
Stanishev, Vallery
Papamichail, Alexis
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Cites_doi 10.1063/1.4801520
10.1063/5.0087033
10.1063/1.115805
10.1063/1.114974
10.1364/ol.40.002688
10.1063/1.4889920
10.1063/1.115730
10.1063/5.0093292
10.1126/science.aau8623
10.1063/5.0010267
10.1063/5.0160612
10.1063/1.4975056
10.1063/5.0163754
10.1002/pssb.19680250129
10.1103/physrevb.6.1226
10.1103/physrevb.57.8951
10.1103/physrevb.64.045213
10.1109/tthz.2018.2814347
10.1002/pssb.200642097
10.1063/1.4983765
10.1103/PhysRevB.95.035403
10.1063/1.125567
10.1063/1.5018247
10.1063/1.1630369
10.1103/physrevb.53.4265
10.1063/5.0089406
10.1016/0038-1098(95)00337-1
10.1063/1.4833195
10.1007/s11664-008-0385-8
10.1103/physrevb.64.115204
10.3390/app11136053
10.1063/1.5011192
10.1143/ptp.33.423
10.1142/s0217979219501285
10.1021/acs.cgd.2c00683
10.1063/1.4765351
10.1063/1.3100206
10.1063/5.0022600
10.1002/pssc.201510214
10.1063/1.4840055
10.1143/jjap.34.l1178
10.1088/1361-6404/ab9931
10.1364/josaa.33.001553
10.1103/physrev.124.983
10.1103/physrevb.62.7365
10.1103/physrevb.102.205108
10.1364/josaa.20.000347
10.1109/ted.2022.3177388
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References Drechsler, Hofmann, Meyer, Detchprohm, Amano, Akasaki (c1) 1995; 34
Rukelj (c48) 2020; 102
Rösler (c39) 1968; 25
Lovejoy, Melloch, Lundstrom (c31) 1995; 67
Korotyeyev, Kochelap, Kaliuzhnyi, Belyaev (c17) 2022; 120
Bhalla, Singh (c43) 2019; 33
Götz, Johnson, Chen, Liu, Kuo, Imler (c29) 1996; 68
Armakavicius, Chen, Hofmann, Knight, Kühne, Nilsson, Forsberg, Janzén, Darakchieva (c15) 2016; 13
Knight, Mock, Korlacki, Darakchieva, Monemar, Kumagai, Goto, Higashiwaki, Schubert (c13) 2018; 112
Arakawa, Ueno, Imabeppu, Kobayashi, Ohta, Fujioka (c30) 2017; 110
Kurakin, Vitusevich, Danylyuk, Hardtdegen, Klein, Bougrioua, Naumov, Belyaev (c37) 2009; 105
Delgado Carrascon, Richter, Nawaz, Paskov, Darakchieva (c23) 2022; 22
McGill, Cao, Fowler, DeLeo (c35) 1998; 57
Schubert (c27) 1996; 53
Schubert, Kühne, Darakchieva, Hofmann (c8) 2016; 33
Knight, Schöche, Darakchieva, Kühne, Carlin, Grandjean, Herzinger, Schubert, Hofmann (c28) 2015; 40
Adamov, Pashnev, Shalygin, Moldavskaya, Vinnichenko, Janonis, Jorudas, Tumėnas, Prystawko, Krysko, Sakowicz, Kašalynas (c20) 2021; 11
Knight, Schöche, Kühne, Hofmann, Darakchieva, Schubert (c24) 2020; 91
Dzhikirba, Shuvaev, Khudaiberdiev, Kukushkin, Muravev (c42) 2023; 123
Hofmann, Darakchieva, Monemar, Lu, Schaff, Schubert (c9) 2008; 37
Armakavicius, Stanishev, Knight, Kühne, Schubert, Darakchieva (c10) 2018; 112
Schöche, Kühne, Hofmann, Schubert, Nilsson, Kakanakova-Georgieva, Janzén, Darakchieva (c11) 2013; 103
Syed, Heroux, Wang, Manfra, Molnar, Stormer (c33) 2003; 83
Hofmann, Kühne, Schöche, Chen, Forsberg, Janzén, Ben Sedrine, Herzinger, Woollam, Schubert, Darakchieva (c14) 2012; 101
Knight, Richter, Papamichail, Kühne, Armakavicius, Guo, Persson, Stanishev, Rindert, Persson, Paskov, Schubert, Darakchieva (c41) 2023; 134
Papamichail, Kakanakova-Georgieva, Sveinbjörnsson, Persson, Hult, Rorsman, Stanishev, Le, Persson, Nawaz, Chen, Paskov, Darakchieva (c22) 2022; 131
Perlin, Litwin-Staszewska, Suchanek, Knap, Camassel, Suski, Piotrzkowski, Grzegory, Porowski, Kaminska, Chervin (c4) 1996; 68
Meyer, Volm, Graber, Alt, Detchprohm, Amano, Akasaki (c2) 1995; 95
Kupčić (c51) 2017; 95
Schöche, Hofmann, Nilsson, Kakanakova-Georgieva, Janzén, Kühne, Lorenz, Schubert, Darakchieva (c12) 2017; 121
Feneberg, Lange, Lidig, Wieneke, Witte, Bläsing, Dadgar, Krost, Goldhahn (c6) 2013; 103
Kühne, Armakavicius, Papamichail, Tran, Stanishev, Schubert, Paskov, Darakchieva (c18) 2022; 120
Witowski, Pakuła, Baranowski, Sadowski, Wyder (c3) 1999; 75
Chaudhuri, Bader, Chen, Muller, Xing, Jena (c38) 2019; 365
Pashnev, Kaplas, Korotyeyev, Janonis, Urbanowicz, Jorudas, Kašalynas (c19) 2020; 117
Rodina, Dietrich, Göldner, Eckey, Hoffmann, Efros, Rosen, Meyer (c40) 2001; 64
Youn, Rho, Min, Kim (c46) 2007; 244
Zwanzig (c49) 1961; 124
Schubert, Hofmann, Herzinger (c7) 2003; 20
Pashnev, Korotyeyev, Jorudas, Urbanowicz, Prystawko, Janonis, Kašalynas (c21) 2022; 69
Kühne, Herzinger, Schubert, Woollam, Hofmann (c25) 2014; 85
Kumari, Singh (c44) 2020; 41
Götze, Wölfle (c45) 1972; 6
Kühne, Armakavicius, Stanishev, Herzinger, Schubert, Darakchieva (c16) 2018; 8
Mori (c50) 1965; 33
Dreyer, Janotti, Van de Walle (c34) 2013; 102
Arnaudov, Paskova, Goldys, Evtimova, Monemar (c36) 2001; 64
Kasic, Schubert, Einfeldt, Hommel, Tiwald (c5) 2000; 62
(2024021618172389600_c13) 2018; 112
(2024021618172389600_c30) 2017; 110
2024021618172389600_c47
(2024021618172389600_c10) 2018; 112
(2024021618172389600_c39) 1968; 25
(2024021618172389600_c20) 2021; 11
(2024021618172389600_c31) 1995; 67
(2024021618172389600_c14) 2012; 101
(2024021618172389600_c25) 2014; 85
(2024021618172389600_c15) 2016; 13
(2024021618172389600_c36) 2001; 64
(2024021618172389600_c28) 2015; 40
(2024021618172389600_c12) 2017; 121
(2024021618172389600_c45) 1972; 6
(2024021618172389600_c51) 2017; 95
(2024021618172389600_c41) 2023; 134
(2024021618172389600_c18) 2022; 120
(2024021618172389600_c21) 2022; 69
(2024021618172389600_c27) 1996; 53
(2024021618172389600_c11) 2013; 103
(2024021618172389600_c42) 2023; 123
(2024021618172389600_c5) 2000; 62
(2024021618172389600_c17) 2022; 120
(2024021618172389600_c3) 1999; 75
(2024021618172389600_c7) 2003; 20
(2024021618172389600_c33) 2003; 83
(2024021618172389600_c1) 1995; 34
(2024021618172389600_c49) 1961; 124
(2024021618172389600_c48) 2020; 102
(2024021618172389600_c2) 1995; 95
(2024021618172389600_c29) 1996; 68
(2024021618172389600_c35) 1998; 57
(2024021618172389600_c43) 2019; 33
(2024021618172389600_c16) 2018; 8
(2024021618172389600_c4) 1996; 68
(2024021618172389600_c46) 2007; 244
(2024021618172389600_c26) 2007
(2024021618172389600_c19) 2020; 117
(2024021618172389600_c40) 2001; 64
(2024021618172389600_c38) 2019; 365
(2024021618172389600_c6) 2013; 103
(2024021618172389600_c8) 2016; 33
(2024021618172389600_c24) 2020; 91
(2024021618172389600_c23) 2022; 22
(2024021618172389600_c50) 1965; 33
(2024021618172389600_c44) 2020; 41
(2024021618172389600_c22) 2022; 131
(2024021618172389600_c34) 2013; 102
(2024021618172389600_c37) 2009; 105
(2024021618172389600_c9) 2008; 37
References_xml – volume: 62
  start-page: 7365
  year: 2000
  ident: c5
  publication-title: Phys. Rev. B
  contributor:
    fullname: Tiwald
– volume: 131
  start-page: 185704
  year: 2022
  ident: c22
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Darakchieva
– volume: 102
  start-page: 205108
  year: 2020
  ident: c48
  publication-title: Phys. Rev. B
  contributor:
    fullname: Rukelj
– volume: 112
  start-page: 082103
  year: 2018
  ident: c10
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Darakchieva
– volume: 69
  start-page: 3636
  year: 2022
  ident: c21
  publication-title: IEEE Trans. Electron Devices
  contributor:
    fullname: Kašalynas
– volume: 117
  start-page: 162101
  year: 2020
  ident: c19
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Kašalynas
– volume: 103
  start-page: 212107
  year: 2013
  ident: c11
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Darakchieva
– volume: 37
  start-page: 611
  year: 2008
  ident: c9
  publication-title: J. Electron. Mater.
  contributor:
    fullname: Schubert
– volume: 13
  start-page: 369
  year: 2016
  ident: c15
  publication-title: Phys. Status Solidi C
  contributor:
    fullname: Darakchieva
– volume: 365
  start-page: 1454
  year: 2019
  ident: c38
  publication-title: Science
  contributor:
    fullname: Jena
– volume: 41
  start-page: 053001
  year: 2020
  ident: c44
  publication-title: Eur. J. Phys.
  contributor:
    fullname: Singh
– volume: 103
  start-page: 232104
  year: 2013
  ident: c6
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Goldhahn
– volume: 22
  start-page: 7021
  year: 2022
  ident: c23
  publication-title: Cryst. Growth Des.
  contributor:
    fullname: Darakchieva
– volume: 123
  start-page: 052104
  year: 2023
  ident: c42
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Muravev
– volume: 112
  start-page: 012103
  year: 2018
  ident: c13
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Schubert
– volume: 33
  start-page: 423
  year: 1965
  ident: c50
  publication-title: Prog. Theor. Phys.
  contributor:
    fullname: Mori
– volume: 40
  start-page: 2688
  year: 2015
  ident: c28
  publication-title: Opt. Lett.
  contributor:
    fullname: Hofmann
– volume: 8
  start-page: 257
  year: 2018
  ident: c16
  publication-title: IEEE Trans. Terahertz Sci. Technol.
  contributor:
    fullname: Darakchieva
– volume: 34
  start-page: L1178
  year: 1995
  ident: c1
  publication-title: Jpn. J. Appl. Phys.
  contributor:
    fullname: Akasaki
– volume: 85
  start-page: 071301
  year: 2014
  ident: c25
  publication-title: Rev. Sci. Instrum.
  contributor:
    fullname: Hofmann
– volume: 6
  start-page: 1226
  year: 1972
  ident: c45
  publication-title: Phys. Rev. B
  contributor:
    fullname: Wölfle
– volume: 95
  start-page: 597
  year: 1995
  ident: c2
  publication-title: Solid State Commun.
  contributor:
    fullname: Akasaki
– volume: 110
  start-page: 042103
  year: 2017
  ident: c30
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Fujioka
– volume: 244
  start-page: 1354
  year: 2007
  ident: c46
  publication-title: Phys. Status Solidi B
  contributor:
    fullname: Kim
– volume: 67
  start-page: 1101
  year: 1995
  ident: c31
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Lundstrom
– volume: 68
  start-page: 1114
  year: 1996
  ident: c4
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Chervin
– volume: 68
  start-page: 3144
  year: 1996
  ident: c29
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Imler
– volume: 25
  start-page: 311
  year: 1968
  ident: c39
  publication-title: Phys. Status Solidi B
  contributor:
    fullname: Rösler
– volume: 83
  start-page: 4553
  year: 2003
  ident: c33
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Stormer
– volume: 120
  start-page: 252103
  year: 2022
  ident: c17
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Belyaev
– volume: 91
  start-page: 083903
  year: 2020
  ident: c24
  publication-title: Rev. Sci. Instrum.
  contributor:
    fullname: Schubert
– volume: 120
  start-page: 253102
  year: 2022
  ident: c18
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Darakchieva
– volume: 102
  start-page: 142105
  year: 2013
  ident: c34
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Van de Walle
– volume: 124
  start-page: 983
  year: 1961
  ident: c49
  publication-title: Phys. Rev.
  contributor:
    fullname: Zwanzig
– volume: 20
  start-page: 347
  year: 2003
  ident: c7
  publication-title: J. Opt. Soc. Am. A
  contributor:
    fullname: Herzinger
– volume: 64
  start-page: 115204
  year: 2001
  ident: c40
  publication-title: Phys. Rev. B
  contributor:
    fullname: Meyer
– volume: 33
  start-page: 1553
  year: 2016
  ident: c8
  publication-title: J. Opt. Soc. Am. A
  contributor:
    fullname: Hofmann
– volume: 64
  start-page: 045213
  year: 2001
  ident: c36
  publication-title: Phys. Rev. B
  contributor:
    fullname: Monemar
– volume: 33
  start-page: 1950128
  year: 2019
  ident: c43
  publication-title: Int. J. Mod. Phys. B
  contributor:
    fullname: Singh
– volume: 134
  start-page: 185701
  year: 2023
  ident: c41
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Darakchieva
– volume: 11
  start-page: 6053
  year: 2021
  ident: c20
  publication-title: Appl. Sci.
  contributor:
    fullname: Kašalynas
– volume: 75
  start-page: 4154
  year: 1999
  ident: c3
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Wyder
– volume: 121
  start-page: 205701
  year: 2017
  ident: c12
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Darakchieva
– volume: 101
  start-page: 192102
  year: 2012
  ident: c14
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Darakchieva
– volume: 105
  start-page: 073703
  year: 2009
  ident: c37
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Belyaev
– volume: 53
  start-page: 4265
  year: 1996
  ident: c27
  publication-title: Phys. Rev. B
  contributor:
    fullname: Schubert
– volume: 57
  start-page: 8951
  year: 1998
  ident: c35
  publication-title: Phys. Rev. B
  contributor:
    fullname: DeLeo
– volume: 95
  start-page: 035403
  year: 2017
  ident: c51
  publication-title: Phys. Rev. B
  contributor:
    fullname: Kupčić
– volume: 102
  start-page: 142105
  year: 2013
  ident: 2024021618172389600_c34
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4801520
– volume: 120
  start-page: 253102
  year: 2022
  ident: 2024021618172389600_c18
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/5.0087033
– volume: 68
  start-page: 3144
  year: 1996
  ident: 2024021618172389600_c29
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.115805
– volume: 67
  start-page: 1101
  year: 1995
  ident: 2024021618172389600_c31
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.114974
– volume: 40
  start-page: 2688
  year: 2015
  ident: 2024021618172389600_c28
  publication-title: Opt. Lett.
  doi: 10.1364/ol.40.002688
– volume: 85
  start-page: 071301
  year: 2014
  ident: 2024021618172389600_c25
  publication-title: Rev. Sci. Instrum.
  doi: 10.1063/1.4889920
– volume: 68
  start-page: 1114
  year: 1996
  ident: 2024021618172389600_c4
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.115730
– volume: 120
  start-page: 252103
  year: 2022
  ident: 2024021618172389600_c17
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/5.0093292
– volume: 365
  start-page: 1454
  year: 2019
  ident: 2024021618172389600_c38
  publication-title: Science
  doi: 10.1126/science.aau8623
– volume: 91
  start-page: 083903
  year: 2020
  ident: 2024021618172389600_c24
  publication-title: Rev. Sci. Instrum.
  doi: 10.1063/5.0010267
– volume: 123
  start-page: 052104
  year: 2023
  ident: 2024021618172389600_c42
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/5.0160612
– volume: 110
  start-page: 042103
  year: 2017
  ident: 2024021618172389600_c30
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4975056
– volume: 134
  start-page: 185701
  year: 2023
  ident: 2024021618172389600_c41
  publication-title: J. Appl. Phys.
  doi: 10.1063/5.0163754
– volume: 25
  start-page: 311
  year: 1968
  ident: 2024021618172389600_c39
  publication-title: Phys. Status Solidi B
  doi: 10.1002/pssb.19680250129
– volume: 6
  start-page: 1226
  year: 1972
  ident: 2024021618172389600_c45
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.6.1226
– volume: 57
  start-page: 8951
  year: 1998
  ident: 2024021618172389600_c35
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.57.8951
– volume: 64
  start-page: 045213
  year: 2001
  ident: 2024021618172389600_c36
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.64.045213
– ident: 2024021618172389600_c47
– volume: 8
  start-page: 257
  year: 2018
  ident: 2024021618172389600_c16
  publication-title: IEEE Trans. Terahertz Sci. Technol.
  doi: 10.1109/tthz.2018.2814347
– volume: 244
  start-page: 1354
  year: 2007
  ident: 2024021618172389600_c46
  publication-title: Phys. Status Solidi B
  doi: 10.1002/pssb.200642097
– volume: 121
  start-page: 205701
  year: 2017
  ident: 2024021618172389600_c12
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4983765
– volume: 95
  start-page: 035403
  year: 2017
  ident: 2024021618172389600_c51
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.95.035403
– volume: 75
  start-page: 4154
  year: 1999
  ident: 2024021618172389600_c3
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.125567
– volume: 112
  start-page: 082103
  year: 2018
  ident: 2024021618172389600_c10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.5018247
– volume: 83
  start-page: 4553
  year: 2003
  ident: 2024021618172389600_c33
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1630369
– volume: 53
  start-page: 4265
  year: 1996
  ident: 2024021618172389600_c27
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.53.4265
– volume: 131
  start-page: 185704
  year: 2022
  ident: 2024021618172389600_c22
  publication-title: J. Appl. Phys.
  doi: 10.1063/5.0089406
– volume: 95
  start-page: 597
  year: 1995
  ident: 2024021618172389600_c2
  publication-title: Solid State Commun.
  doi: 10.1016/0038-1098(95)00337-1
– volume: 103
  start-page: 212107
  year: 2013
  ident: 2024021618172389600_c11
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4833195
– volume: 37
  start-page: 611
  year: 2008
  ident: 2024021618172389600_c9
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-008-0385-8
– volume: 64
  start-page: 115204
  year: 2001
  ident: 2024021618172389600_c40
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.64.115204
– volume: 11
  start-page: 6053
  year: 2021
  ident: 2024021618172389600_c20
  publication-title: Appl. Sci.
  doi: 10.3390/app11136053
– volume: 112
  start-page: 012103
  year: 2018
  ident: 2024021618172389600_c13
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.5011192
– volume: 33
  start-page: 423
  year: 1965
  ident: 2024021618172389600_c50
  publication-title: Prog. Theor. Phys.
  doi: 10.1143/ptp.33.423
– volume: 33
  start-page: 1950128
  year: 2019
  ident: 2024021618172389600_c43
  publication-title: Int. J. Mod. Phys. B
  doi: 10.1142/s0217979219501285
– volume: 22
  start-page: 7021
  year: 2022
  ident: 2024021618172389600_c23
  publication-title: Cryst. Growth Des.
  doi: 10.1021/acs.cgd.2c00683
– volume: 101
  start-page: 192102
  year: 2012
  ident: 2024021618172389600_c14
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4765351
– volume: 105
  start-page: 073703
  year: 2009
  ident: 2024021618172389600_c37
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3100206
– volume: 117
  start-page: 162101
  year: 2020
  ident: 2024021618172389600_c19
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/5.0022600
– volume: 13
  start-page: 369
  year: 2016
  ident: 2024021618172389600_c15
  publication-title: Phys. Status Solidi C
  doi: 10.1002/pssc.201510214
– volume: 103
  start-page: 232104
  year: 2013
  ident: 2024021618172389600_c6
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4840055
– volume: 34
  start-page: L1178
  year: 1995
  ident: 2024021618172389600_c1
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/jjap.34.l1178
– start-page: 81
  volume-title: Spectroscopic Ellipsometry: Principles and Applications
  year: 2007
  ident: 2024021618172389600_c26
– volume: 41
  start-page: 053001
  year: 2020
  ident: 2024021618172389600_c44
  publication-title: Eur. J. Phys.
  doi: 10.1088/1361-6404/ab9931
– volume: 33
  start-page: 1553
  year: 2016
  ident: 2024021618172389600_c8
  publication-title: J. Opt. Soc. Am. A
  doi: 10.1364/josaa.33.001553
– volume: 124
  start-page: 983
  year: 1961
  ident: 2024021618172389600_c49
  publication-title: Phys. Rev.
  doi: 10.1103/physrev.124.983
– volume: 62
  start-page: 7365
  year: 2000
  ident: 2024021618172389600_c5
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.62.7365
– volume: 102
  start-page: 205108
  year: 2020
  ident: 2024021618172389600_c48
  publication-title: Phys. Rev. B
  doi: 10.1103/physrevb.102.205108
– volume: 20
  start-page: 347
  year: 2003
  ident: 2024021618172389600_c7
  publication-title: J. Opt. Soc. Am. A
  doi: 10.1364/josaa.20.000347
– volume: 69
  start-page: 3636
  year: 2022
  ident: 2024021618172389600_c21
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/ted.2022.3177388
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Snippet Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be...
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SubjectTerms Condensed Matter Physics
Den kondenserade materiens fysik
Fysik
Natural Sciences
Naturvetenskap
Physical Sciences
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Title Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
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