Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various i...
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| Published in | Membranes (Basel) Vol. 12; no. 1; p. 7 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
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01.01.2022
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| Abstract | Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators. |
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| AbstractList | Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO
2
TFTs. We examined the effect of the carrier concentration in the SnO
2
channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators. Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators. Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators.Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators. |
| Author | Jang, Jin Avis, Christophe |
| AuthorAffiliation | Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Korea; jjang@khu.ac.kr |
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| Author_xml | – sequence: 1 givenname: Christophe surname: Avis fullname: Avis, Christophe – sequence: 2 givenname: Jin surname: Jang fullname: Jang, Jin |
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| Copyright | 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. 2021 by the authors. 2021 |
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| DOI | 10.3390/membranes12010007 |
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| SubjectTerms | Annealing Carrier density Curing gate bias stress high k Hysteresis Indium Industrial applications Oscillators polycrystalline oxide semiconductor Polycrystals Semiconductor devices Semiconductors thin film transistor Thin film transistors Thin films Tin Tin dioxide Tin oxide Tin oxides Zinc oxides |
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| Title | Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits |
| URI | https://www.proquest.com/docview/2621329328 https://www.proquest.com/docview/2622277364 https://pubmed.ncbi.nlm.nih.gov/PMC8781581 https://doaj.org/article/2d496d5c34d546a19377eff8f46449d1 |
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