APA (7th ed.) Citation

Avis, C., & Jang, J. (2022). Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits. Membranes (Basel), 12(1), 7. https://doi.org/10.3390/membranes12010007

Chicago Style (17th ed.) Citation

Avis, Christophe, and Jin Jang. "Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits." Membranes (Basel) 12, no. 1 (2022): 7. https://doi.org/10.3390/membranes12010007.

MLA (9th ed.) Citation

Avis, Christophe, and Jin Jang. "Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits." Membranes (Basel), vol. 12, no. 1, 2022, p. 7, https://doi.org/10.3390/membranes12010007.