Deterministic fabrication of 3D/2D perovskite bilayer stacks for durable and efficient solar cells
Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovs...
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| Published in | Science (American Association for the Advancement of Science) Vol. 377; no. 6613; pp. 1425 - 1430 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Washington
The American Association for the Advancement of Science
23.09.2022
American Association for the Advancement of Science (AAAS) AAAS |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D–2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of
T
99
(time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency.
Two-dimensional (2D) halide perovskite passivation layers grown on three-dimensional (3D) perovskite can boost the power conversion efficiency (PCE) of solar cells, but spin-coating of these layers usually forms heterogeneous 2D phases or only ultrathin layers. Sidhik
et al
. found that solvents with the appropriate dielectric constant and donor strength could grow phase-pure 2D phases of controlled thickness and composition on 3D substrates without dissolving them. Solar cells maintained a peak PCE of 24.5% for 2000 hours with less than 1% degradation under continuous light at 55°C and 65% relative humidity. —PDS
Solvents enable growth of phase-pure two-dimensional perovskites without dissolving three-dimensional perovskite substrates. |
|---|---|
| AbstractList | Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D–2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of T 99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency. Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D-2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of T99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency.Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D-2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of T99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency. Pure perovskite topcoatsTwo-dimensional (2D) halide perovskite passivation layers grown on three-dimensional (3D) perovskite can boost the power conversion efficiency (PCE) of solar cells, but spin-coating of these layers usually forms heterogeneous 2D phases or only ultrathin layers. Sidhik et al. found that solvents with the appropriate dielectric constant and donor strength could grow phase-pure 2D phases of controlled thickness and composition on 3D substrates without dissolving them. Solar cells maintained a peak PCE of 24.5% for 2000 hours with less than 1% degradation under continuous light at 55°C and 65% relative humidity. —PDS Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D–2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. Here we measured a photovoltaic efficiency of 24.5%, with exceptional stability of T99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency. Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the underlying layer. By leveraging the solvent dielectric constant and Gutmann donor number, we could grow phase-pure two-dimensional (2D) halide perovskite stacks of the desired composition, thickness, and bandgap onto 3D perovskites without dissolving the underlying substrate. Characterization reveals a 3D–2D transition region of 20 nanometers mainly determined by the roughness of the bottom 3D layer. Thickness dependence of the 2D perovskite layer reveals the anticipated trends for n-i-p and p-i-n architectures, which is consistent with band alignment and carrier transport limits for 2D perovskites. We measured a photovoltaic efficiency of 24.5%, with exceptional stability of T 99 (time required to preserve 99% of initial photovoltaic efficiency) of >2000 hours, implying that the 3D/2D bilayer inherits the intrinsic durability of 2D perovskite without compromising efficiency. Two-dimensional (2D) halide perovskite passivation layers grown on three-dimensional (3D) perovskite can boost the power conversion efficiency (PCE) of solar cells, but spin-coating of these layers usually forms heterogeneous 2D phases or only ultrathin layers. Sidhik et al . found that solvents with the appropriate dielectric constant and donor strength could grow phase-pure 2D phases of controlled thickness and composition on 3D substrates without dissolving them. Solar cells maintained a peak PCE of 24.5% for 2000 hours with less than 1% degradation under continuous light at 55°C and 65% relative humidity. —PDS Solvents enable growth of phase-pure two-dimensional perovskites without dissolving three-dimensional perovskite substrates. |
| Author | Torma, Andrew J. Even, Jacky Alam, Muhammad Ashraful Mohite, Aditya D. Agrawal, Ayush Wang, Yafei Kanatzidis, Mercouri G. Strzalka, Joseph Ajayan, Pulickel M. Traore, Boubacar Li, Wenbin Terlier, Tanguy Giridharagopal, Rajiv Asadpour, Reza Ginger, David S. Sidhik, Siraj De Siena, Michael Shuai, Xinting Puthirath, Anand B. Ho, Kevin Jones, Matthew Katan, Claudine |
| Author_xml | – sequence: 1 givenname: Siraj orcidid: 0000-0002-2097-2830 surname: Sidhik fullname: Sidhik, Siraj organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA., Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX 77005, USA – sequence: 2 givenname: Yafei surname: Wang fullname: Wang, Yafei organization: Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX 77005, USA., School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou, Guangdong 510006, China – sequence: 3 givenname: Michael orcidid: 0000-0003-0379-5577 surname: De Siena fullname: De Siena, Michael organization: Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA – sequence: 4 givenname: Reza orcidid: 0000-0003-0930-2120 surname: Asadpour fullname: Asadpour, Reza organization: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA – sequence: 5 givenname: Andrew J. orcidid: 0000-0003-3443-2621 surname: Torma fullname: Torma, Andrew J. organization: Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX 77005, USA – sequence: 6 givenname: Tanguy orcidid: 0000-0002-4092-0771 surname: Terlier fullname: Terlier, Tanguy organization: Shared Equipment Authority, Secure and Intelligent Micro-Systems (SIMS) Laboratory, Rice University, Houston, TX 77005, USA – sequence: 7 givenname: Kevin orcidid: 0000-0003-2688-2606 surname: Ho fullname: Ho, Kevin organization: Department of Chemistry, University of Washington, Seattle, WA 98195, USA – sequence: 8 givenname: Wenbin surname: Li fullname: Li, Wenbin organization: Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX 77005, USA., Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX 77005, USA – sequence: 9 givenname: Anand B. orcidid: 0000-0003-4064-6271 surname: Puthirath fullname: Puthirath, Anand B. organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA – sequence: 10 givenname: Xinting orcidid: 0000-0002-2446-020X surname: Shuai fullname: Shuai, Xinting organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA – sequence: 11 givenname: Ayush orcidid: 0000-0001-5603-0581 surname: Agrawal fullname: Agrawal, Ayush organization: Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX 77005, USA – sequence: 12 givenname: Boubacar orcidid: 0000-0003-0568-4141 surname: Traore fullname: Traore, Boubacar organization: École Nationale Supérieure de Chimie de Rennes (ENSCR), Univ Rennes, CNRS, Institut des Sciences Chimiques de Rennes (ISCR)–UMR 6226, F-35000 Rennes, France – sequence: 13 givenname: Matthew orcidid: 0000-0002-9289-291X surname: Jones fullname: Jones, Matthew organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA., Department of Chemistry, Rice University, Houston, TX 77005, USA – sequence: 14 givenname: Rajiv orcidid: 0000-0001-6076-852X surname: Giridharagopal fullname: Giridharagopal, Rajiv organization: Department of Chemistry, University of Washington, Seattle, WA 98195, USA – sequence: 15 givenname: Pulickel M. orcidid: 0000-0001-8323-7860 surname: Ajayan fullname: Ajayan, Pulickel M. organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA – sequence: 16 givenname: Joseph orcidid: 0000-0003-4619-8932 surname: Strzalka fullname: Strzalka, Joseph organization: X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439, USA – sequence: 17 givenname: David S. orcidid: 0000-0002-9759-5447 surname: Ginger fullname: Ginger, David S. organization: Department of Chemistry, University of Washington, Seattle, WA 98195, USA – sequence: 18 givenname: Claudine orcidid: 0000-0002-2017-5823 surname: Katan fullname: Katan, Claudine organization: École Nationale Supérieure de Chimie de Rennes (ENSCR), Univ Rennes, CNRS, Institut des Sciences Chimiques de Rennes (ISCR)–UMR 6226, F-35000 Rennes, France – sequence: 19 givenname: Muhammad Ashraful orcidid: 0000-0001-8775-6043 surname: Alam fullname: Alam, Muhammad Ashraful organization: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA – sequence: 20 givenname: Jacky orcidid: 0000-0002-4607-3390 surname: Even fullname: Even, Jacky organization: Institut National des Sciences Appliquées (INSA) Rennes, Univ Rennes, CNRS, Institut Fonctions Optiques pour les Technologies de l’Information (FOTON)–UMR 6082, F-35000 Rennes, France – sequence: 21 givenname: Mercouri G. orcidid: 0000-0003-2037-4168 surname: Kanatzidis fullname: Kanatzidis, Mercouri G. organization: Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA – sequence: 22 givenname: Aditya D. orcidid: 0000-0001-8865-409X surname: Mohite fullname: Mohite, Aditya D. organization: Department of Material Science and Nanoengineering, Rice University, Houston, TX 77005, USA., Department of Chemical and Biomolecular Engineering, Rice University, Houston, TX 77005, USA |
| BackLink | https://hal.science/hal-03784361$$DView record in HAL https://www.osti.gov/servlets/purl/1909609$$D View this record in Osti.gov |
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| Snippet | Realizing solution-processed heterostructures is a long-enduring challenge in halide perovskites because of solvent incompatibilities that disrupt the... Pure perovskite topcoatsTwo-dimensional (2D) halide perovskite passivation layers grown on three-dimensional (3D) perovskite can boost the power conversion... |
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| SubjectTerms | Chemical Sciences Dielectric constant Dielectric strength Energy conversion efficiency Fabrication or physical chemistry Perovskites Photodegradation Photovoltaic cells Relative humidity Solar cells SOLAR ENERGY Spin coating Substrates Theoretical and |
| Title | Deterministic fabrication of 3D/2D perovskite bilayer stacks for durable and efficient solar cells |
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