Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpa...

Full description

Saved in:
Bibliographic Details
Published inPhysical review letters Vol. 97; no. 25; p. 256603
Main Authors Marumoto, Kazuhiro, Kuroda, Shin-ichi, Takenobu, Taishi, Iwasa, Yoshihiro
Format Journal Article
LanguageEnglish
Published United States 22.12.2006
Online AccessGet more information

Cover

More Information
Summary:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
ISSN:0031-9007
DOI:10.1103/physrevlett.97.256603