Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device

• Published in: Sensors (Basel, Switzerland) Vol. 19; no. 9; p. 2209
• Main Authors: Sukesan, Revathi, Chen, Yi-Ting, Shahim, Suman, Wang, Shin-Li, Sarangadharan, Indu, Wang, Yu-Lin
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 13.05.2019; MDPI
• Subjects: Chemical contaminants; Contamination; Deoxyribonucleic acid; DNA; Electrodes; Epoxy resins; extended gate devices; field-effect transistors (FETs); Food contamination & poisoning; Graphene; heavy metal ion detection; ion selective membrane (ISM); Laboratories; mercury; Sensors; Spectrum analysis; Transistors; United States > US; Taiwan; heavy metal ion detection; ion selective membrane (ISM); extended gate devices; mercury; field-effect transistors (FETs)

Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg2+]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg2+]...