A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor

• Published in: Advances in materials science and engineering Vol. 2021; no. 1
• Main Author: Shura, Megersa Wodajo
• Format: Journal Article
• Language: English
• Published: New York Hindawi 2021; Hindawi Limited
• Subjects: Carrier recombination; Energy; Energy gap; Energy levels; Equilibrium; Majority carriers; Minority carriers; P-type semiconductors; Semiconductors; Silicon; Trapping

In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a l...