Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data

• Published in: Sensors (Basel, Switzerland) Vol. 17; no. 11; p. 2524
• Main Authors: Liu, Zhen, Mei, Wenjuan, Zeng, Xianping, Yang, Chenglin, Zhou, Xiuyun
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 03.11.2017; MDPI
• Subjects: degradation data; IGBT; prediction model; remaining useful life; Useful life; VKOPP; IGBT; prediction model; remaining useful life; VKOPP; degradation data

The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue i...