Signature of pressure-induced topological phase transition in ZrTe5

The layered van der Waals material ZrTe 5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model t...

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Published innpj quantum materials Vol. 9; no. 1; pp. 76 - 8
Main Authors Kovács-Krausz, Zoltán, Nagy, Dániel, Márffy, Albin, Karpiak, Bogdan, Tajkov, Zoltán, Oroszlány, László, Koltai, János, Nemes-Incze, Péter, Dash, Saroj P., Makk, Péter, Csonka, Szabolcs, Tóvári, Endre
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 05.10.2024
Nature Publishing Group
Nature Portfolio
Subjects
639/301/119/2795
639/766/119/2792/4128
639/766/119/995
639/925/357/1018
Chemical potential
Condensed Matter Physics
Conduction bands
Electrons
Magnetic properties
Nanotechnology devices
Phase transitions
Physics
Physics and Astronomy
Quantum Physics
Structural Materials
Surfaces and Interfaces
Temperature dependence
Thin Films
Topological insulators
Valence band
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ISSN2397-4648
2397-4648
DOI10.1038/s41535-024-00679-7

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Abstract The layered van der Waals material ZrTe 5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe 5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe 5 is a weak TI in ambient conditions.
AbstractList The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.
The layered van der Waals material ZrTe 5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe 5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe 5 is a weak TI in ambient conditions.
The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.
Abstract The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.
ArticleNumber 76
Author Nagy, Dániel
Dash, Saroj P.
Márffy, Albin
Tajkov, Zoltán
Nemes-Incze, Péter
Makk, Péter
Kovács-Krausz, Zoltán
Csonka, Szabolcs
Oroszlány, László
Koltai, János
Karpiak, Bogdan
Tóvári, Endre
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Snippet The layered van der Waals material ZrTe 5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other...
The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other...
Abstract The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other...
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SubjectTerms 639/301/119/2795
639/766/119/2792/4128
639/766/119/995
639/925/357/1018
Chemical potential
Condensed Matter Physics
Conduction bands
Electrons
Magnetic properties
Nanotechnology devices
Phase transitions
Physics
Physics and Astronomy
Quantum Physics
Structural Materials
Surfaces and Interfaces
Temperature dependence
Thin Films
Topological insulators
Valence band
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Title Signature of pressure-induced topological phase transition in ZrTe5
URI https://link.springer.com/article/10.1038/s41535-024-00679-7
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