Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

• Published in: IEEE electron device letters Vol. 35; no. 12; pp. 1242 - 1244
• Main Authors: Xiuling Li, Di Geng, Mativenga, Mallory, Yuanfeng Chen, Jin Jang
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.2014
• Subjects: a-IGZO TFTs; Capacitance; dual-gate; Electrodes; Indium gallium zinc oxide; Ring oscillators; ring-oscillator; Switching circuits; Thin film transistors; a-IGZO TFTs; ring-oscillator; dual-gate

The effect of bulk accumulation on switching speed of dual-gate amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-based circuits is investigated. Given that bulk accumulation is achieved by synchronized driving of the top gate (TG) and bottom gate, it can be modulated by varying the len...