Orbital Gating Driven by Giant Stark Effect in Tunneling Phototransistors

• Published in: Advanced Materials Vol. 34; no. 6; pp. e2106625 - n/a
• Main Authors: Kim, Eunah, Hwang, Geunwoo, Kim, Dohyun, Won, Dongyeun, Joo, Yanggeun, Zheng, Shoujun, Watanabe, Kenji, Taniguchi, Takashi, Moon, Pilkyung, Kim, Dong‐Wook, Sun, Linfeng, Yang, Heejun
• Format: Journal Article
• Language: English
• Published: Germany Wiley 01.02.2022; Wiley Subscription Services, Inc
• Subjects: Carrier density; Dark current; Dielectrics; Electric fields; giant Stark effect; Illumination; Interlayers; Light; Materials science; Molybdenum compounds; Nanoparticles; Optoelectronic devices; Photoconductivity; photogating; Phototransistors; Potential gradient; Stark effect; Switching; Tellurides; Transistors; tunneling; van der Waals heterostructures; photoconductivity; van der Waals heterostructures; tunneling; photogating; giant Stark effect

Conventional gating in transistors uses electric fields through external dielectrics that require complex fabrication processes. Various optoelectronic devices deploy photogating by electric fields from trapped charges in neighbor nanoparticles or dielectrics under light illumination. Orbital gating...