Initial oxidation kinetics of Si(113)-(3 × 2) investigated using supersonic seeded molecular beams

[Display omitted] The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si 2p state and the O 1s state to evaluate the oxide thickness and comp...

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Published inSurface Science Vol. 697; p. 121600
Main Authors Ohno, S., Tanaka, K., Kodama, H., Tanaka, M., Yoshigoe, A., Teraoka, Y.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.2020
Elsevier BV
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Abstract [Display omitted] The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si 2p state and the O 1s state to evaluate the oxide thickness and composition, and to assess the strain at the SiO2/Si interface. The oxidized components in the Si 2p state (Si1+, Si2+, Si3+, Si4+) were analyzed. In the O 1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized supersonic seeded molecular beam (SSMB) to obtain oxygen molecules with high translational kinetic energies (Et). We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing the value of Et.
AbstractList The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si 2p state and the O 1s state to evaluate the oxide thickness and composition, and to assess the strain at the SiO2/Si interface. The oxidized components in the Si 2p state (Si1+, Si2+, Si3+, Si4+) were analyzed. In the O 1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized supersonic seeded molecular beam (SSMB) to obtain oxygen molecules with high translational kinetic energies (Et). We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing the value of Et.
[Display omitted] The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si 2p state and the O 1s state to evaluate the oxide thickness and composition, and to assess the strain at the SiO2/Si interface. The oxidized components in the Si 2p state (Si1+, Si2+, Si3+, Si4+) were analyzed. In the O 1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized supersonic seeded molecular beam (SSMB) to obtain oxygen molecules with high translational kinetic energies (Et). We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing the value of Et.
ArticleNumber 121600
Author Yoshigoe, A.
Kodama, H.
Ohno, S.
Tanaka, K.
Teraoka, Y.
Tanaka, M.
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Snippet [Display omitted] The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with...
The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-resolution photoelectron spectroscopy with synchrotron...
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SubjectTerms Binding
Binding energy
Molecular beam
Molecular beams
Oxidation
Photoelectrons
Reaction kinetics
Real-time monitoring
Si surface
Silicon dioxide
Synchrotron radiation
Synchrotrons
XPS
Title Initial oxidation kinetics of Si(113)-(3 × 2) investigated using supersonic seeded molecular beams
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