Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency
This paper reports on the implementation of carrier‐selective tunnel oxide passivated rear contact for high‐efficiency screen‐printed large area n‐type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ poly...
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Published in | Progress in photovoltaics Vol. 24; no. 6; pp. 830 - 835 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bognor Regis
Blackwell Publishing Ltd
01.06.2016
Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | This paper reports on the implementation of carrier‐selective tunnel oxide passivated rear contact for high‐efficiency screen‐printed large area n‐type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open‐circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back‐end high temperature process. In combination with an ion‐implanted Al2O3‐passivated boron emitter and screen‐printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n‐type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
It was found that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provided excellent rear contact passivation with implied open‐circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. In combination with an ion‐implanted Al2O3‐passivated boron emitter and screen‐printed front metal grids, this tunnel oxide passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n‐type Czochralski wafers. |
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Bibliography: | DOE FPACE II - No. DE-EE0006336 DOE Solarmat 2 - No. DE-EE0006815 istex:E0CB24755F2B54231DF6209436116099D51D61B1 ArticleID:PIP2739 ark:/67375/WNG-01NWPKXT-C ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1062-7995 1099-159X |
DOI: | 10.1002/pip.2739 |