Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles
We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM mo...
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Published in | APL materials Vol. 4; no. 11; pp. 116105 - 116105-8 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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01.11.2016
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Abstract | We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs. |
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AbstractList | We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs. |
Author | Takeya, Jun Bisri, Satria Z. Heiss, Wolfgang Matsui, Hiroyuki Sytnyk, Mykhailo Loi, Maria A. Nugraha, Mohamad I. |
Author_xml | – sequence: 1 givenname: Mohamad I. surname: Nugraha fullname: Nugraha, Mohamad I. organization: 4Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany and Energie Campus Nürnberg (EnCN), Fürther Straße 250, 90429 Nürnberg, Germany – sequence: 2 givenname: Hiroyuki surname: Matsui fullname: Matsui, Hiroyuki organization: The University of Tokyo – sequence: 3 givenname: Satria Z. surname: Bisri fullname: Bisri, Satria Z. organization: 4Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany and Energie Campus Nürnberg (EnCN), Fürther Straße 250, 90429 Nürnberg, Germany – sequence: 4 givenname: Mykhailo surname: Sytnyk fullname: Sytnyk, Mykhailo organization: Energie Campus Nürnberg (EnCN), Fürther Straße 250 – sequence: 5 givenname: Wolfgang surname: Heiss fullname: Heiss, Wolfgang organization: Energie Campus Nürnberg (EnCN), Fürther Straße 250 – sequence: 6 givenname: Maria A. surname: Loi fullname: Loi, Maria A. email: m.a.loi@rug.nl, takeya@k.u-tokyo.ac.jp organization: University of Groningen – sequence: 7 givenname: Jun surname: Takeya fullname: Takeya, Jun email: m.a.loi@rug.nl, takeya@k.u-tokyo.ac.jp organization: The University of Tokyo |
BookMark | eNp9kNtKxDAQhoMoeLzwDXKr0DVp2jS9lMUTCAquIN6EaQ5LlpqUpBX27a3uuoqKVzMM3_8N_Pto2wdvEDqmZEIJZ2d0UtSc50Rsob2ccp6VLH_a_rbvoqOUFoQQShgTNd9Dz7PBQ9MarEPn_Bw7j--bB-zBBxWXqYcWW2danRlrjepxH8Enl_oQEx7SeyIN0YIy-CW0Rg0tRKxdN-7pEO1YaJM5Ws8D9Hh5MZteZ7d3VzfT89tMFZz3makqzpsir4kxdZnXjFWQC1tV1EAlNC9poaxSglLV5HmlhCIEDCm51qwaP7MDdLPy6gAL2UX3AnEpAzj5cQhxLiH2TrVGWqFsAVwLRk3BmqYGLaBgipXCNqNxdJ2sXCqGlKKxGx8l8r1jSeW645E9-8Eq10Pvgh9Lcu2fidNVIn2SG_1riF-g7LT9D_5tfgO-2Z01 |
CODEN | AMPADS |
CitedBy_id | crossref_primary_10_1021_acs_jpcc_0c06751 crossref_primary_10_1002_adfm_202202954 crossref_primary_10_1002_aenm_201901244 crossref_primary_10_1002_adfm_201902105 crossref_primary_10_1016_j_jphotochem_2020_112779 crossref_primary_10_1021_acsomega_9b00195 crossref_primary_10_1002_adma_202210683 crossref_primary_10_1021_acsnano_4c04076 crossref_primary_10_1039_D0CP01556C crossref_primary_10_1021_acsami_0c06306 crossref_primary_10_1016_j_mtsust_2022_100305 |
Cites_doi | 10.1063/1.1785290 10.1021/nl504582d 10.1016/j.orgel.2014.01.003 10.1039/c3ee41479e 10.1021/nn3008788 10.1038/nmat3984 10.1038/nmat4007 10.1038/nmat1105 10.1002/adfm.200500424 10.1021/nl202578g 10.1002/adma.201304280 10.1021/nn3057356 10.1021/nn4021983 10.1063/1.4869216 10.1038/nmat2059 10.1126/science.1170524 10.1063/1.3575334 10.1021/nn100339b 10.1021/jp0563585 10.1002/adma.200801752 10.1021/ja1024832 10.1063/1.3518067 10.1021/am401278p 10.1002/adma.201404495 10.1021/nn500897c 10.1038/nnano.2012.127 10.1038/nphoton.2009.72 10.1002/adma.200305395 10.1038/srep02004 10.1039/c4tc01624f 10.1063/1.2917800 10.1002/adma.201202825 10.1039/C3CP54145B 10.1021/acsnano.5b04547 10.1002/adma.201205041 |
ContentType | Journal Article |
Copyright | Author(s) |
Copyright_xml | – notice: Author(s) |
DBID | AJDQP AAYXX CITATION DOA |
DOI | 10.1063/1.4966208 |
DatabaseName | AIP Open Access Journals CrossRef DOAJ Directory of Open Access Journals |
DatabaseTitle | CrossRef |
DatabaseTitleList | CrossRef |
Database_xml | – sequence: 1 dbid: DOA name: DOAJ Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website – sequence: 2 dbid: AJDQP name: AIP Open Access Journals url: https://publishing.aip.org/librarians/open-access-policy sourceTypes: Enrichment Source Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 2166-532X |
EndPage | 116105-8 |
ExternalDocumentID | oai_doaj_org_article_f8cf4a6d831e43bb9ad8a43c358fb56d 10_1063_1_4966208 apm |
GrantInformation_xml | – fundername: European Research Council (ERC) grantid: 306983 funderid: http://dx.doi.org/10.13039/501100000781 |
GroupedDBID | 4.4 5VS AAFWJ ABFTF ADBBV ADCTM AEGXH AENEX AFPKN AGKCL AGLKD AHSDT AJDQP ALMA_UNASSIGNED_HOLDINGS ASPBG AVWKF AZFZN BCNDV EBS EJD FRP GROUPED_DOAJ KQ8 M~E O-B OK1 RIP RNS RQS AAYXX ABJGX ADMLS AKSGC CITATION |
ID | FETCH-LOGICAL-c466t-e7766b4290ee9529337a28f771ea78d6514cfcc811cb227c8c00ae056dd37fac3 |
IEDL.DBID | DOA |
ISSN | 2166-532X |
IngestDate | Wed Aug 27 01:15:42 EDT 2025 Thu Jul 03 08:24:42 EDT 2025 Thu Apr 24 23:02:48 EDT 2025 Fri Jun 21 00:14:44 EDT 2024 Sun Jul 14 10:05:18 EDT 2019 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 11 |
Language | English |
License | 2166-532X/2016/4(11)/116105/8/$0.00 All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c466t-e7766b4290ee9529337a28f771ea78d6514cfcc811cb227c8c00ae056dd37fac3 |
ORCID | 0000-0002-3922-6248 0000-0001-9352-1902 |
OpenAccessLink | https://doaj.org/article/f8cf4a6d831e43bb9ad8a43c358fb56d |
PageCount | 8 |
ParticipantIDs | crossref_primary_10_1063_1_4966208 crossref_citationtrail_10_1063_1_4966208 scitation_primary_10_1063_1_4966208 doaj_primary_oai_doaj_org_article_f8cf4a6d831e43bb9ad8a43c358fb56d |
PublicationCentury | 2000 |
PublicationDate | 20161101 2016-11-01 |
PublicationDateYYYYMMDD | 2016-11-01 |
PublicationDate_xml | – month: 11 year: 2016 text: 20161101 day: 01 |
PublicationDecade | 2010 |
PublicationTitle | APL materials |
PublicationYear | 2016 |
Publisher | AIP Publishing LLC |
Publisher_xml | – name: AIP Publishing LLC |
References | Ip, Thon, Hoogland, Voznyy, Zhitomirsky, Debnath, Levina, Rollny, Carey, Fischer, Kemp, Kramer, Ning, Labelle, Chou, Amassian, Sargent (c7) 2012 Oh, Berry, Choi, Gaulding, Paik, Hong, Murray, Kagan (c24) 2013 Rost, Karg, Riess, Loi, Murgia, Muccini (c34) 2004 Hardigree, Dawidczyk, Ireland, Johns, Jung, Nyman, Osterbacka, Markovic, Katz (c31) 2013 Loi, Rost-Bietsch, Murgia, Karg, Riess, Muccini (c35) 2006 Hines, Scholes (c2) 2003 Piliego, Protesescu, Bisri, Kovalenko, Loi (c4) 2013 Bisri, Piliego, Yarema, Heiss, Loi (c15) 2013 Zhitomirsky, Furukawa, Tang, Stadler, Hoogland, Voznyy, Liu, Sargent (c23) 2012 Zarghami, Liu, Gibbs, Gebremichael, Webster, Law (c22) 2010 Kovalenko, Scheele, Talapin (c26) 2009 Szendrei, Gomulya, Yarema, Heiss, Loi (c9) 2010 Cademartiri, Bertolotti, Sapienza, Wiersma, von Freymann, Ozin (c1) 2006 Schornbaum, Zakharko, Held, Thiemann, Gannott, Zaumseil (c19) 2015 Kobayashi, Nishikawa, Takenobu, Mori, Shimoda, Mitani, Shimotani, Yoshimoto, Ogawa, Iwasa (c33) 2004 Nugraha, Häusermann, Bisri, Matsui, Sytnyk, Heiss, Takeya, Loi (c12) 2015 Osedach, Zhao, Andrew, Brown, Wanger, Strasfeld, Chang, Bawendi, Bulović (c10) 2012 Rauch, Böberl, Tedde, Fürst, Kovalenko, Hesser, Lemmer, Heiss, Hayden (c20) 2009 Jo, Kim, Kim, Kim, Oh, Kang, Kim, Kim, Ju, Park (c11) 2014 Balazs, Dirin, Fang, Protesescu, ten Brink, Kooi, Kovalenko, Loi (c13) 2015 Pernstich, Rashid, Haas, Schitter, Oberhoff, Goldmann, Gundlach, Batlogg (c29) 2004 Koh, Saudari, Fafarman, Kagan, Murray (c14) 2011 Chuang, Brown, Bulović, Bawendi (c6) 2014 Brown, Kim, Lunt, Zhao, Bawendi, Grossman, Bulovic (c27) 2014 Celle, Suspène, Ternisien, Lenfant, Guérin, Smaali, Lmimouni, Simonato, Vuillaume (c30) 2014 Lai, Protesescu, Kovalenko, Loi (c5) 2014 Balazs, Nugraha, Bisri, Sytnyk, Heiss, Loi (c16) 2014 Ning, Voznyy, Pan, Hoogland, Adinolfi, Xu, Li, Kirmani, Sun, Minor, Kemp, Dong, Rollny, Labelle, Carey, Sutherland, Hill, Amassian, Liu, Tang, Bakr, Sargent (c8) 2014 Thon, Ip, Voznyy, Levina, Kemp, Carey, Masala, Sargent (c25) 2013 Koh, Koposov, Stewart, Pal, Robel, Pietryga, Klimov (c28) 2013 Calhoun, Sanchez, Olaya, Gershenson, Podzorov (c32) 2008 Bisri, Piliego, Gao, Loi (c17) 2014 Klem, Shukla, Hinds, MacNeil, Levina, Sargent (c21) 2008 Szendrei, Cordella, Kovalenko, Böberl, Hesser, Yarema, Jarzab, Mikhnenko, Gocalinska, Saba, Quochi, Mura, Bongiovanni, Blom, Heiss, Loi (c18) 2009 Kovalenko, Bodnarchuk, Zaumseil, Lee, Talapin (c3) 2010 (2023062313492070900_c18) 2009; 21 (2023062313492070900_c8) 2014; 13 (2023062313492070900_c14) 2011; 11 (2023062313492070900_c4) 2013; 6 (2023062313492070900_c27) 2014; 8 (2023062313492070900_c1) 2006; 110 (2023062313492070900_c30) 2014; 15 (2023062313492070900_c2) 2003; 15 (2023062313492070900_c9) 2010; 97 (2023062313492070900_c10) 2012; 6 (2023062313492070900_c16) 2014; 104 (2023062313492070900_c12) 2015; 27 (2023062313492070900_c31) 2013; 5 (2023062313492070900_c32) 2008; 7 (2023062313492070900_c28) 2013; 3 (2023062313492070900_c29) 2004; 109 (2023062313492070900_c17) 2014; 26 (2023062313492070900_c35) 2006; 16 (2023062313492070900_c25) 2013; 7 (2023062313492070900_c5) 2014; 16 (2023062313492070900_c19) 2015; 15 (2023062313492070900_c23) 2012; 24 (2023062313492070900_c34) 2004; 85 (2023062313492070900_c11) 2014; 2 (2023062313492070900_c13) 2015; 9 (2023062313492070900_c26) 2009; 324 (2023062313492070900_c3) 2010; 132 (2023062313492070900_c21) 2008; 92 (2023062313492070900_c22) 2010; 4 (2023062313492070900_c15) 2013; 25 (2023062313492070900_c24) 2013; 7 (2023062313492070900_c33) 2004; 3 (2023062313492070900_c6) 2014; 13 (2023062313492070900_c7) 2012; 7 (2023062313492070900_c20) 2009; 3 |
References_xml | – start-page: 1844 year: 2003 ident: c2 publication-title: Adv. Mater. – start-page: 3054 year: 2013 ident: c4 publication-title: Energy Environ. Sci. – start-page: 2004 year: 2013 ident: c28 publication-title: Sci. Rep. – start-page: 084510 year: 2004 ident: c29 publication-title: J. Appl. Phys. – start-page: 317 year: 2004 ident: c33 publication-title: Nat. Mater. – start-page: 577 year: 2012 ident: c7 publication-title: Nat. Nanotechnol. – start-page: 2475 year: 2010 ident: c22 publication-title: ACS Nano – start-page: 2107 year: 2015 ident: c12 publication-title: Adv. Mater. – start-page: 84 year: 2008 ident: c32 publication-title: Nat. Mater. – start-page: 1822 year: 2015 ident: c19 publication-title: Nano Lett. – start-page: 5863 year: 2014 ident: c27 publication-title: ACS Nano – start-page: 41 year: 2006 ident: c35 publication-title: Adv. Funct. Mater. – start-page: 4764 year: 2011 ident: c14 publication-title: Nano Lett. – start-page: 112104 year: 2014 ident: c16 publication-title: Appl. Phys. Lett. – start-page: 6181 year: 2012 ident: c23 publication-title: Adv. Mater. – start-page: 1613 year: 2004 ident: c34 publication-title: Appl. Phys. Lett. – start-page: 10085 year: 2010 ident: c3 publication-title: J. Am. Chem. Soc. – start-page: 1417 year: 2009 ident: c26 publication-title: Science – start-page: 10305 year: 2014 ident: c11 publication-title: J. Mater. Chem. C Mater. Opt. Electron. Devices – start-page: 7680 year: 2013 ident: c25 publication-title: ACS Nano – start-page: 796 year: 2014 ident: c6 publication-title: Nat. Mater. – start-page: 11951 year: 2015 ident: c13 publication-title: ACS Nano – start-page: 683 year: 2009 ident: c18 publication-title: Adv. Mater. – start-page: 212105 year: 2008 ident: c21 publication-title: Appl. Phys. Lett. – start-page: 2413 year: 2013 ident: c24 publication-title: ACS Nano – start-page: 203501 year: 2010 ident: c9 publication-title: Appl. Phys. Lett. – start-page: 3121 year: 2012 ident: c10 publication-title: ACS Nano – start-page: 4309 year: 2013 ident: c15 publication-title: Adv. Mater. – start-page: 1176 year: 2014 ident: c17 publication-title: Adv. Mater. – start-page: 7025 year: 2013 ident: c31 publication-title: ACS Appl. Mater. Interfaces – start-page: 736 year: 2014 ident: c5 publication-title: Phys. Chem. Chem. Phys. – start-page: 822 year: 2014 ident: c8 publication-title: Nat. Mater. – start-page: 671 year: 2006 ident: c1 publication-title: J. Phys. Chem. B – start-page: 332 year: 2009 ident: c20 publication-title: Nat. Photonics – start-page: 729 year: 2014 ident: c30 publication-title: Org. Electron. Phys., Mater. Appl. – volume: 85 start-page: 1613 year: 2004 ident: 2023062313492070900_c34 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1785290 – volume: 15 start-page: 1822 year: 2015 ident: 2023062313492070900_c19 publication-title: Nano Lett. doi: 10.1021/nl504582d – volume: 15 start-page: 729 year: 2014 ident: 2023062313492070900_c30 publication-title: Org. Electron. Phys., Mater. Appl. doi: 10.1016/j.orgel.2014.01.003 – volume: 6 start-page: 3054 year: 2013 ident: 2023062313492070900_c4 publication-title: Energy Environ. Sci. doi: 10.1039/c3ee41479e – volume: 6 start-page: 3121 year: 2012 ident: 2023062313492070900_c10 publication-title: ACS Nano doi: 10.1021/nn3008788 – volume: 13 start-page: 796 year: 2014 ident: 2023062313492070900_c6 publication-title: Nat. Mater. doi: 10.1038/nmat3984 – volume: 13 start-page: 822 year: 2014 ident: 2023062313492070900_c8 publication-title: Nat. Mater. doi: 10.1038/nmat4007 – volume: 3 start-page: 317 year: 2004 ident: 2023062313492070900_c33 publication-title: Nat. Mater. doi: 10.1038/nmat1105 – volume: 16 start-page: 41 year: 2006 ident: 2023062313492070900_c35 publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.200500424 – volume: 11 start-page: 4764 year: 2011 ident: 2023062313492070900_c14 publication-title: Nano Lett. doi: 10.1021/nl202578g – volume: 26 start-page: 1176 year: 2014 ident: 2023062313492070900_c17 publication-title: Adv. Mater. doi: 10.1002/adma.201304280 – volume: 7 start-page: 2413 year: 2013 ident: 2023062313492070900_c24 publication-title: ACS Nano doi: 10.1021/nn3057356 – volume: 7 start-page: 7680 year: 2013 ident: 2023062313492070900_c25 publication-title: ACS Nano doi: 10.1021/nn4021983 – volume: 104 start-page: 112104 year: 2014 ident: 2023062313492070900_c16 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4869216 – volume: 7 start-page: 84 year: 2008 ident: 2023062313492070900_c32 publication-title: Nat. Mater. doi: 10.1038/nmat2059 – volume: 324 start-page: 1417 year: 2009 ident: 2023062313492070900_c26 publication-title: Science doi: 10.1126/science.1170524 – volume: 109 start-page: 084510 year: 2004 ident: 2023062313492070900_c29 publication-title: J. Appl. Phys. doi: 10.1063/1.3575334 – volume: 4 start-page: 2475 year: 2010 ident: 2023062313492070900_c22 publication-title: ACS Nano doi: 10.1021/nn100339b – volume: 110 start-page: 671 year: 2006 ident: 2023062313492070900_c1 publication-title: J. Phys. Chem. B doi: 10.1021/jp0563585 – volume: 21 start-page: 683 year: 2009 ident: 2023062313492070900_c18 publication-title: Adv. Mater. doi: 10.1002/adma.200801752 – volume: 132 start-page: 10085 year: 2010 ident: 2023062313492070900_c3 publication-title: J. Am. Chem. Soc. doi: 10.1021/ja1024832 – volume: 97 start-page: 203501 year: 2010 ident: 2023062313492070900_c9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3518067 – volume: 5 start-page: 7025 year: 2013 ident: 2023062313492070900_c31 publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/am401278p – volume: 27 start-page: 2107 year: 2015 ident: 2023062313492070900_c12 publication-title: Adv. Mater. doi: 10.1002/adma.201404495 – volume: 8 start-page: 5863 year: 2014 ident: 2023062313492070900_c27 publication-title: ACS Nano doi: 10.1021/nn500897c – volume: 7 start-page: 577 year: 2012 ident: 2023062313492070900_c7 publication-title: Nat. Nanotechnol. doi: 10.1038/nnano.2012.127 – volume: 3 start-page: 332 year: 2009 ident: 2023062313492070900_c20 publication-title: Nat. Photonics doi: 10.1038/nphoton.2009.72 – volume: 15 start-page: 1844 year: 2003 ident: 2023062313492070900_c2 publication-title: Adv. Mater. doi: 10.1002/adma.200305395 – volume: 3 start-page: 2004 year: 2013 ident: 2023062313492070900_c28 publication-title: Sci. Rep. doi: 10.1038/srep02004 – volume: 2 start-page: 10305 year: 2014 ident: 2023062313492070900_c11 publication-title: J. Mater. Chem. C Mater. Opt. Electron. Devices doi: 10.1039/c4tc01624f – volume: 92 start-page: 212105 year: 2008 ident: 2023062313492070900_c21 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2917800 – volume: 24 start-page: 6181 year: 2012 ident: 2023062313492070900_c23 publication-title: Adv. Mater. doi: 10.1002/adma.201202825 – volume: 16 start-page: 736 year: 2014 ident: 2023062313492070900_c5 publication-title: Phys. Chem. Chem. Phys. doi: 10.1039/C3CP54145B – volume: 9 start-page: 11951 year: 2015 ident: 2023062313492070900_c13 publication-title: ACS Nano doi: 10.1021/acsnano.5b04547 – volume: 25 start-page: 4309 year: 2013 ident: 2023062313492070900_c15 publication-title: Adv. Mater. doi: 10.1002/adma.201205041 |
SSID | ssj0001033896 |
Score | 2.1119776 |
Snippet | We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we... |
SourceID | doaj crossref scitation |
SourceType | Open Website Enrichment Source Index Database Publisher |
StartPage | 116105 |
SummonAdditionalLinks | – databaseName: AIP Open Access Journals dbid: AJDQP link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3fS9xAEB7kfKg-lNpaerXKUvvgSzSb3ezuPWpbEaHFUgXxJeyPWTnQ3HHeCf73zia58wQtfQ2TLJlJ-L7dmfkG4JuNWGinQ8aRy3R0g9lAIM9Ka2KI0RNEpkbhX7_VyYU8vSwvV2D3lQy-Egd8XxIlL1JD72pB5Nj0YPXw9Mefs6ejlJz2WQM11w1avucZ2jSi_OvwhrClTXMvIcnxO3jbUUB22MZsA1awfg_rS8KAH-DqfNb0NLHQ9DOxYc3O3F9W23rkJw9E6G5YU3qWteUYbJoQpxH8uGOpkv2a3c0m0Xpkt_PxtywMx0m8aRMujn-efz_JuikImZdKTTPUWilHsJEjDkpCZ6FtYaLWHK02QRHj8dF7w7l3RaG98XlukXhNCELTSuIj9OpRjZ-A5Uh8whaeNllcWoFO6dwqbVHbUDpZ9mFv7q1q7qM0qeKmalLVSlS86hzbh68L03Gri_GS0VFy-cIgSVk3Fyi-VfdnVNH4KK0KRnCUwrmBDcZK4UVpoqO36MPuImD_WuoFq_vR5MmiGof4-b-etQVrRItU23H4BXrTyQy3iXpM3U736T0CzYzWhQ priority: 102 providerName: American Institute of Physics |
Title | Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles |
URI | http://dx.doi.org/10.1063/1.4966208 https://doaj.org/article/f8cf4a6d831e43bb9ad8a43c358fb56d |
Volume | 4 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV1LSwMxEA6iB_UgPrG-COrBy-pmk03So09KQalYoXhZ8piIoNtSW8F_b5Jt6x5EL16XgYSZJd83ycw3CB0rB5nQwiYECAtXN5A0KZAkV9JZ54yHyNAofHvHW4-s3ct7tVFfoSaskgeuHHfmpHFMcSspAUa1biorFaOG5tLpnNtw-nrMqyVT8XYl9alXHM6VEc6TnGa9qawQp2fklHmWn4WRkjUwipr9y2jRQ0_1Cl4DmptVtDJhiPi82tkamoNyHS3XdAM30FN3HFuesI3tTvilxB39gEtV9s3w0_O9Vxwr05KqWgOPAiBFPZB3HArdn_H7eOiUAfw2nY6L7csgaDttoseb6-5lK5kMSUgM43yUgBCca48qKUAz9-BNhcqkE4KAEtJyT4iMM0YSYnSWCSNNmirwtMdaKvxKdAvNl_0SthFOwdMNlRmfgxGmKGguUsWFAqFsrlneQCdTbxVTH4VBFq9FfMnmtCDFxLENdDgzHVSyGT8ZXQSXzwyC0nX84ONfTOJf_BX_BjqaBey3pX6w-ugPvy2KgXU7_7GhXbTkSRWv-hX30PxoOIZ9T1xG-gAtnLev7jsH8V_9Aq0M7WU |
linkProvider | Directory of Open Access Journals |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT9wwELbQcqAcEKWtuqUPq-XAJRDHju090gdaKCBQFwn1EvkxrlZastE-KvHvO06yDyRUcY0mtjMT6fvGnvlMyIEJkCmrfMKAibh1A0mPA0tyo4MPwSFExkbhyyvZvxXnd_ldW5sTe2FwEdMjM6waieDq_rh1YDJCzjmvVoIDkh-zI4FkPYutvpuYjUvdIZsn599vrlebLClmYD25UBRaf-cRDtVy_dtkC1GnOQBfw5jTXbLTkkN60izmJdmAco9sr0kGviK_B_O624n6utOJDkt6bX_R0pRjN3lAqjeidVFa0hRq0FnEoloKZEpjjfsfOp1PgnFA7xcX41I_rKKs02tye_pj8K2ftPcjJE5IOUtAKSktAkoK0MsRt7kymQ5KMTBKe4lcyAXnNGPOZply2qWpAWQ83nOFM_E3pFOOS3hLaArINEzmMP1iwnCwUqVGKgPK-NyKvEsOF94qFj6Kd1iMivoQW_KCFa1ju-Tz0rRqFDOeMvoaXb40iCLX9QMMe9GGvAjaBWGk15yB4Nb2jNdGcMdzHSx-RZd8WQbsf1M9YfV3PFlZFJUP75411iey1R9cXhQXZ1c_98kLJE-y6Ut8TzqzyRw-IEGZ2Y_tb_gPXHTjhw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Tunable+doping+in+PbS+nanocrystal+field-effect+transistors+using+surface+molecular+dipoles&rft.jtitle=APL+materials&rft.au=Nugraha%2C+Mohamad+I.&rft.au=Matsui%2C+Hiroyuki&rft.au=Bisri%2C+Satria+Z.&rft.au=Sytnyk%2C+Mykhailo&rft.date=2016-11-01&rft.issn=2166-532X&rft.eissn=2166-532X&rft.volume=4&rft.issue=11&rft_id=info:doi/10.1063%2F1.4966208&rft.externalDBID=n%2Fa&rft.externalDocID=10_1063_1_4966208 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2166-532X&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2166-532X&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2166-532X&client=summon |